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http://dx.doi.org/10.1016/j.cap.2008.06.006

Structural, electrical and optical properties of sol–gel AZO thin films  

Lee, Ka-Eun (Department of Physics, University of Ulsan)
Wang, Ming-Song (Department of Chemical Engineering, University of Ulsan)
Kim, Eui-Jung (Department of Chemical Engineering, University of Ulsan)
Hahn, Sung-Hong (Department of Physics, University of Ulsan)
Abstract
Transparent conductive Al-doped zinc oxide (AZO) thin films were prepared by a sol-gel method and their structural, electrical and optical properties were systematically investigated. A minimum resistivity of 4.2 ${\times}$ $10^{-3}$ $\Omega$ cm was obtained for the 650 $^{\circ}C$-annealed films doped with 1.0 at.% Al. All films had the preferential c-axis oriented texture according to the X-ray diffraction (XRD) results. Optical transmittance spectra of the films showed a high transmittance of over 85% in the visible region and the optical band gap of the AZO films broadened with increasing doping concentration.
Keywords
Sol–gel; AZO thin film; XPS; Photoluminescence; Electrical properties;
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