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Effect of Target Bias Voltage on Gold Films Using Plasma Based Ion Implantation  

Chun, Sung-Yong (Department of Advanced Materials Science and Engineering, Mokpo National University)
Publication Information
Journal of the Korean Physical Society / v.52, no.4, 2008 , pp. 1227-1230 More about this Journal
Abstract
The nucleation and the growing behavior of gold films on carbon under a high voltage pulsed bias using a plasma based ion implantation system was investigated by field-emission scanning electron microscopy (FE-SEM) and Rutherford backscattering spectrometry (RBS). Without an ion implantation process, the films exhibit a typical polycrystalline Vollmer-Weber mode, {\it i.e.}, island, network and channel stages, until the films eventually become continuous. With an ion implantation process, film growth proceeds by a different growth mode consisting of a ultra-thin film with increased nucleation density. A huge morphology change of the deposited films due to the subsequent deposition, resputtering and mixing is observed with changing target bias voltage.
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