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http://dx.doi.org/10.4283/JMAG.2003.8.1.032

Temperature Dependence of Exchange Coupling on Magnetic funnel Junctions  

Hu, Yong-Kang (Department of Materials Engineering, Chungnam National University)
Kim, Cheol-Gi (Department of Materials Engineering, Chungnam National University)
Stobiecki, Tomasz (Department of Electronics, University of Mining and Metallurgy)
Kim, Chong-Oh (Department of Materials Engineering, Chungnam National University)
Hong, Ki-Min (Department of Physics, Chungnam National University)
Publication Information
Abstract
Magnetic funnel Junctions (MTJs) were fabricated on thermally oxidized Si (100) wafers using DC magnetron sputtering. The film Structures were Ta(50 ${\AA}$)/CU(100 ${\AA}$)$Ni_{80}Fe_{20}(20 $ ${\AA}$)/Cu(50 ${\AA}$)/$Mn_{75}Ir_{25}(100 $ ${\AA}$)/$Co_{70}Fe_{30}(25$ ${\AA}$)/Al-O(15 ${\AA}$)/$Co_{70}Fe_{30}(25 $ ${\AA}$)/$Ni_{80}Fe_{20}(t)/Ta(50 $ ${\AA}$), with t=0 ${\AA}$, 100 and 1000 ${\AA}$, respectively. X-ray diffraction has shown improvement of (111) texture of IrMn$_3$ and Cu by annealing. The exchange-biased energy is almost inversely proportional to temperature. The difference between the coercivity H$_c$ and the exchange biased field H$_E$ for t = 0 $_3$ sample is smaller than that for t = 1000 ${\AA}$. For the pinned layer, the decreasing rate of the coercivity with the temperature is higher compared to that of the exchange field, but variation of H$_c$ is similar to that of the exchange field for free layer.
Keywords
TMR; XRD; exchange coupling;
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