Browse > Article
http://dx.doi.org/10.5229/JECST.2016.7.3.218

Development of Macro-Porous Silicon Based Dye-Sensitized Solar Cells with Improved Light Trapping  

Aliaghayee, Mehdi (Department of Electrical Engineering, Amirkabir University of Technology)
Fard, Hassan Ghafoori (Department of Electrical Engineering, Amirkabir University of Technology)
Zandi, Ashkan (Department of Electrical Engineering, Amirkabir University of Technology)
Publication Information
Journal of Electrochemical Science and Technology / v.7, no.3, 2016 , pp. 218-227 More about this Journal
Abstract
The light harvesting efficiency is counted as an important factor in the power conversion efficiency of DSSCs. There are two measures to improve this parameter, including enhancing the dye-loading capacity and increasing the light trapping in the photoanode structure. In this paper, these tasks are addressed by introducing a macro-porous silicon (PSi) substrate as photoanode. The effects of the novel photoanode structure on the DSSC performance have been investigated by using energy dispersive X-ray spectroscopy, photocurrent-voltage, UV-visible spectroscopy, reflectance spectroscopy, and electrochemical impedance spectroscopy measurements. The results indicated that bigger porosity percentage of the PSi structure improved the both anti-reflective/light-trapping and dye-loading capacity properties. PSi based DSSCs own higher power conversion efficiency due to its remarkable higher photocurrent, open circuit voltage, and fill factor. Percent porosity of 64%, PSi(III), resulted in nearly 50 percent increment in power conversion efficiency compared with conventional DSSC. This paper showed that PSi can be a good candidate for the improvement of light harvesting efficiency in DSSCs. Furthermore, this study can be considered a valuable reference for more investigations in the design of multifunctional devices which will profit from integrated on-chip solar power.
Keywords
Dye sensitized solar cell; Porous silicon; Electrochemical anodization; Light harvesting efficiency;
Citations & Related Records
연도 인용수 순위
  • Reference
1 S. H. Ko, D. Lee, H. W. Kang, K. H. Nam, J. Y. Yeo, S. J. Hong, C. P. Grigoropoulos and H. J. Sung, Nano Lett., 2011, 11(2), 666-671.   DOI
2 F. Sauvage, D. Chen, P. Comte, F. Huang, L. P Heiniger., Y. B. Cheng, R. A. Caruso and M. Gratzel, ACS Nano, 2010, 4(8), 4420-4425.   DOI
3 T. K. Yun, S. S. Park, D. Kim, Y. K. Hwang, S. Huh, J. Y. Bae and Y. S. Won, J. Power Sources, 2011, 196(7), 3678-3682.   DOI
4 X.-D. Gao, X.-M. Li, X.-Y. Gan, Y.-Q. Wu, R.-K. Zheng, C.-L. Wang, Z.-Y. Gu and P. He, J. Mater. Chem., 2012, 22(36), 18930-18938.   DOI
5 K. Fan, W. Zhang, T. Peng, J. Chen and F. Yang, J. Phys. Chem. C, 2011, 115(34), 17213-17219.   DOI
6 J. Qiu, F. Zhuge, X. Li, X. Gao, X. Gan, L. Li, B. Weng, Z. Shi and Y. H. Hwang, J. Mater. Chem., 2012, 22(8), 3549-3554.   DOI
7 N. C. Jeong, C. Prasittichai and J. T. Hupp, Langmuir, 2011, 27(23), 14609-14614.   DOI
8 S. M. Mahpeykar, J. Koohsorkhi and H. Ghafoori-fard, Nanotechnology, 2012, 23, 165602.   DOI
9 H. J. Koo, J. Park, B. Yoo, K. Yoo, K. Kim and N. G. Park, Inorg. Chim. Acta, 2008, 361, 677-683.   DOI
10 X. Liu, M. Guo, J. Cao, J. Lin, Y. H. Tsang, X. Chen and H. Haung, Nanoscale Research Letters, 2014, 9, 362.   DOI
11 M. D. Brown, T. Suteewong, R. S. S. Kumar, V. D. Innocenzo, A. Petrozza, M. M. Lee, U. Wiesner and H. J. Snaith, Nano Lett., 2011, 11(2), 438-445.   DOI
12 H. Choi, W. T. Chen and P. V. Kamat, ACS Nano, 2012, 6(5), 4418-4427.   DOI
13 B. Mandlmeier, J. M. Szeifert, D. Fattakhova-Rohlfing, H. Amenitsch and T. Bein, J. Am. Chem. Soc., 2011, 133, 17274-17282.   DOI
14 A. Mihi, C. Zhang and P. V. Braun, Angew. Chem. Int. Ed., 2011, 50, 5712-5715.   DOI
15 W. Zhang, M. Anaya, G. Lozano, M. E. Calvo, M. B. Johnston, H. Miguez and H. J. Snaith, Nano Lett., 2015, 15, 1698-1702.   DOI
16 E. Yablonovitch and G. D. Cody, IEEE Trans. Electron Dev., 1982, 29(2), 300-305.   DOI
17 P. Campbell and M. A. Green, J. Appl. Phys., 1987, 62(1), 243-249.   DOI
18 A. W. Smith and A. Rohatgi, Sol. Energy Mat. Sol. C., 1993, 29, 37-49.   DOI
19 S. Wooh, H. Yoon, J. Jung, Y. Lee, J. H. Koh, B. Lee, Y. S. Kang and K. Char, Adv. Mater., 2013, 25, 3111-3116.   DOI
20 S. Q. Hussain, S. Ahn, H. Park, G. Kwon, J. Raja and Y. Lee, Vacuum, 2013, 94, 87-91.   DOI
21 C. H. Lee, P. T. Hsiao, M. D. Lu and J. M. Wu, RSC Adv., 2013, 3, 2216-2218.   DOI
22 L. Chen, M. M. Alkaisi and M. Y. Liao, J. Nonlinear Optic. Phys. Mat., 2010, 19, 761-766.   DOI
23 S. M. Kong, Y. Xiao, K. H. Kim, W. I. Lee and C. W. Chung, Thin Solid Films, 2011, 519, 3173-3176.   DOI
24 N. C. D. Nath, I. S. Jung, S.-W. Kim and J.-J. Lee, Sol. Energy, 2016, 134, 399-405.   DOI
25 C. Gerhards, C. Marckmann, R. Tolle, M. Spiegel, P. Fath, G. Willeke, E. Bucher, J. Creager and S. Narayanan, Proceedings of the 26th IEEE Photovoltaic Specialists Conference, 1997, 43-46.
26 W. A. Nositschka, C. Beneking, O. Voigt and H. Kurz, Sol. Energy Mat. Sol. C., 2003, 76(2), 155-166.   DOI
27 L. A. Dobrzanski, A. Drygała, K. Gołombek, P. Panek, E. Bielanska and P. Zieba, J. Mater. Process. Tech., 2008, 201(1-3), 291-296.   DOI
28 M. J. Sailor, Porous Silicon in Practice: Preparation, Characterization and Applications, Wiley, New York (2012).
29 A. Langner, F. Muller, U. Gosele, O. Hayden, K. Nielsch (Eds.), Molecular- and Nano-Tubes, Springer, New York, 431 (2011).
30 M. Nazari and S. Khatami, Sensor Mater., 2013, 25, 131-140.
31 S. Ito, T. N. Murakami, P. Comte, P. Liska, C. Gratzel, M. K. Nazeeruddin and M. Gratzel, Thin Solid Films, 2008, 516, 4613-4619.   DOI
32 N.-G. Park, J. van de Lagemaat and A. J. Frank, J. Phys. Chem. B, 2000, 104, 8989-8994.
33 Y. S. Jin, K. H. Kim and H. W. Choi, J. Korean Phys. Soc., 2010, 57, 1049-1053.   DOI
34 R. Kern, R. Sastrwan, J. Ferber, R. Stangl and J. Luther, Electrochim. Acta., 2002, 47, 4213-4225.   DOI
35 A. Sharma, R. K. Karn and S. K. Pandiyan, Int. J. Appl. Eng. Res., 2013, 8, 2057-2066.
36 M. Aliaghayee, H. Ghafoori Fard and A. Zandi, J. Porous Mater., 2015, 22, 1617-1626.   DOI
37 J. Bisquert, Phys. Chem. Chem. Phys., 2000, 2, 4185-4192.   DOI
38 Q. Wang, J.-E. Moser, and M. Gratzel, J. Phys. Chem. B, 2005, 109, 14945-14953.   DOI
39 M. A. Green, Solid State Electronics, 1981, 24, 788-789.   DOI