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http://dx.doi.org/10.5515/JKIEES.2017.17.1.20

A Fully Integrated Dual-Band WLP CMOS Power Amplifier for 802.11n WLAN Applications  

Baek, Seungjun (School of Electronic and Computer Engineering, Pusan National University)
Ahn, Hyunjin (School of Electronic and Computer Engineering, Pusan National University)
Ryu, Hyunsik (School of Electronic and Computer Engineering, Pusan National University)
Nam, Ilku (School of Electronic and Computer Engineering, Pusan National University)
An, Deokgi (RAONTECH Inc.)
Choi, Doo-Hyouk (RAONTECH Inc.)
Byun, Mun-Sub (RAONTECH Inc.)
Jeong, Minsu (RAONTECH Inc.)
Kim, Bo-Eun (RAONTECH Inc.)
Lee, Ockgoo (School of Electronic and Computer Engineering, Pusan National University)
Publication Information
Journal of electromagnetic engineering and science / v.17, no.1, 2017 , pp. 20-28 More about this Journal
Abstract
A fully integrated dual-band CMOS power amplifier (PA) is developed for 802.11n WLAN applications using wafer-level package (WLP) technology. This paper presents a detailed design for the optimal impedance of dual-band PA (2 GHz/5 GHz PA) output transformers with low loss, which is provided by using 2:2 and 2:1 output transformers for the 2 GHz PA and the 5 GHz PA, respectively. In addition, several design issues in the dual-band PA design using WLP technology are addressed, and a design method is proposed. All considerations for the design of dual-band WLP PA are fully reflected in the design procedure. The 2 GHz WLP CMOS PA produces a saturated power of 26.3 dBm with a peak power-added efficiency (PAE) of 32.9%. The 5 GHz WLP CMOS PA produces a saturated power of 24.7 dBm with a PAE of 22.2%. The PA is tested using an 802.11n signal, which satisfies the stringent error vector magnitude (EVM) and mask requirements. It achieved an EVM of -28 dB at an output power of 19.5 dBm with a PAE of 13.1% at 2.45 GHz and an EVM of -28 dB at an output power of 18.1 dBm with a PAE of 8.9% at 5.8 GHz.
Keywords
CMOS; Integrated Circuit; Power Amplifier; Transformer; WLAN;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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1 S. C. Cripps, RF Power Amplifiers for Wireless Communication. Boston, MA: Artech House, 1999, pp. 246-248.
2 X. Fan and Q. Han, "Reliability challenges and design considerations for wafer-level packages," in Proceedings of International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), Shanghai, China, 2008, pp. 1-6.
3 J. J. Reche and D. H. Kim, "Wafer level packaging having bump-on-polymer structure," Microelectronics Reliability, vol. 43, no. 6, pp. 879-894, 2003.   DOI
4 B. Rogers, C. Scanlan, and T. Olson, "Implementation of a fully molded fan-out packaging technology," in Proceedings of 10th International Wafer-Level Packaging Conference (IWLPC), San Jose, CA, 2013, pp. 1-6.
5 R. Kumar, T. Krishnaswamy, G. Rajendran, D. Sahu, A. Sivadas, M. Nandigam, et al, "A fully integrated 2 $\times$ 2 b/g and 1 $\times$ 2 a-band MIMO WLAN SoC in 45nm CMOS for multi-radio IC," in Proceedings of IEEE International Solid-State Circuits Conference (ISSCC), San Francisco, CA, 2013, pp. 328-329.
6 O. El-Gharniti, E. Kerherve, and J. B. Begueret, "Modeling and characterization of on-chip transformers for silicon RFIC," IEEE Transactions on Microwave Theory and Techniques, vol. 55, no. 4, pp. 607-615, 2007.   DOI
7 M. Albulet, RF Power Amplifiers. Atlanta, GA: Noble Publishing, 2001, pp. 9-41.
8 O. Lee, H. Ryu, S. Baek, I. Nam, M. Jeong, and B. E. Kim, "A high-efficiency CMOS power amplifier using 2:2 output transformer for 802.11n WLAN applications," Journal of Semiconductor Technology and Science, vol. 15, no. 2, pp. 280-285, 2015.   DOI
9 S. Baek, H. Ryu, I. Nam, M. Jeong, B. E. Kim and O. Lee, "A 2.4-GHz CMOS power amplifier with parallel-combined transistors and selective adaptive biasing for wireless LAN applications," Microwave and Optical Technology Letters, vol. 58, no. 6, pp. 1374-1377, 2016.   DOI
10 T. M. Chen, W. C. Chan, C. C. Lin, J. L. Hsu, W. K. Li, P. A. Wu, et al, "A 2 $\times$ 2 MIMO 802.11 abgn/ac WLAN SoC with integrated T/R switch and on-chip PA delivering VHT80 256QAM 17.5 dBm in 55nm CMOS," in Proceedings of 2014 IEEE Radio Frequency Integrated Circuits Symposium, Tampa Bay, FL, 2014, pp. 225-228.
11 D. Guo, "Power amplifier and front end module requirements for IEEE 802.11n applications," High Frequency Electronics, vol. 10, no. 9, pp. 38-45, 2011.