1 |
Y. Okazaki, T. Kobayashi, S. Konaka, T. Morimoto, M. Takahashi, K. Imaians Y. Kado, Symposium on VLSI Technology, pp. 83-84, 1990
|
2 |
Larry D. Edmonds, IEEE Transactions on Nuclear Science, vol. 38, 2, 828-833, April, 1991
DOI
ScienceOn
|
3 |
Paul M, Carter and Brian R. Wilkins, IEEE J. Solid- State Circuits vol. SC-22, 3, pp. 430-463, June, 1987
|
4 |
Sai-Wai Fu, Amr M. Mohsen, and Tim C. May, IEEE Transactions on Electron Devices vol. ED-32, 1, 49-54, January, 1985
|
5 |
B. Chappell, Stanley E. Schuster, George A. Sai- Halasz, IEEE Transactions on Electron Devices vol. ED-32, 2, 463-470, February, 1985
|
6 |
P. Hazucha, et al., IEEE IEDM Tech. Dig., 523-526, 2003
|
7 |
D. W. Kim, M. K. Gong, J. S. Wang, KIEE International Transaction on EA, vol. 3-C, no. 1, p. 15-18, 2003
|
8 |
D. Burnett, C. Lage, and A. Borrman, IRPS, 156-160, 1993
|
9 |
C. Lage, D. Burnett, T. McNelly, K. Baker, A. Bormann, D. Dreier, V. Soorholtz, IEEE IEDM Tech. Dig., 821-824, 1993
|