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http://dx.doi.org/10.5573/ieie.2014.51.11.231

A Study on Failures by Abnormal AlxOy Layer after PCT  

Choi, Chae-Hyoung (Dept. of Electronic Engineering, Graduated School, YU)
Choi, Deuk-Sung (Dept. of Electronic & Information Engineering, YNC)
Jeong, Seung-Hyun (Dept. of Electronic & Information Engineering, YNC)
Publication Information
Journal of the Institute of Electronics and Information Engineers / v.51, no.11, 2014 , pp. 231-237 More about this Journal
Abstract
In this paper, we have proceeded research for failures of semiconductor device stressed by Pressure Cooker Test(PCT). After PCT stress, we found various failures such as delamination between aluminium line and device layers and chemical composition transition of aluminium. We have executed the analysis using the physical and chemical observation equipments. There were the main failures that aluminium loss of aluminium pad is occurred and $Al_xO_y$($Al_2O_3$ or $Al(OH)_3$)) layer is formed abnormally. The primary cause of the failures is reaction of supplied fluorine or chlorine gases and infiltrated moisture during etching process.
Keywords
Pressure Cooker Test(PCT); aluminium loss; AlxOy layer; chemical composition transition; fluorine and chlorine gases; etching process; infiltrated moisture;
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1 C. Gordon Peattie, Jim D. Adams, Samuel L. Carrell, et. all, "Elements of Semiconductor- Device Reliability", Proceedings of The IEEE, Vol.62, No.2, pp.149-169, Feb., 1974.   DOI   ScienceOn
2 Tomohiro Uno, Takashi Yamada, "Improving Humidity Bond Reliability of Copper Bonding Wires", Electronic Components and Technology Conference, IEEE, pp.1725-1732, 2010.
3 Tzu-Ying Kuo, Shu-Ming Chang, Ying-Ching Shih, et. all, "Reliability Test for a Three Dimensional Chip Stacking Structure with Through Silicon Via Connections and Low Cost", Electronic Components and Technology Conference, IEEE, pp.853-858, 2008.
4 Inderjit Singh, J.Y. On, Lee Levine, "Enhancing Fine Pitch, High I/O Devices with Copper Ball Bonding", Electronic Components and Technology Conference, IEEE, pp.843-847, 2005.
5 S. Alberici, D. Coulon, P. Joubin, et. all, "Surface treatment of wire bonding metal pads", Microelectronic Engineering, 70, pp.558-565, 2003.   DOI   ScienceOn
6 Cheng-Fu Yu, Chi-Ming Chan, Li-Chun Chan, Ker-Chan Hsieh, "Cu wire bond microstructure analysis and failure mechanism", Microelectronics Reliability, 51, pp.119-124, 2011.   DOI   ScienceOn
7 Gaute Svenningsen, "Corrosion of Aluminium Alloys", Department of Materials Technology, 7491 Trondheim, Norway
8 C.W. Tan, A.R. Daud, M.A. Yarmo, "Corrosion study at Cu-Al interface in microelectronics packaging", Applied Surface Science, 191, pp.67-73, 2002.   DOI   ScienceOn
9 Y.F. Chong, R. Gopalakrishnan, C.F. Tsang, et. all, "Chemical and Morphological Studies of Plasma-Treated Intgrated Circuit Bond Pads", Journal of ELECTRONIC MATERIALS, Vol.30, No.3, pp.275-282, 2001.   DOI
10 Y. S. Kim, K. Y. Lim, M. G. Sung, et all, "Low Resistive Tungsten Dual Polymetal gate Process for High Speed and High Density Memory Devices," Solid State Device Research Conference, 2007. ESSDERC 2007, 11-15, pp. 259-262, Sept., 2007.