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Analysis of Current-Voltage characteristics of AlGaN/GaN HEMTs with a Stair-Type Gate structure  

Kim, Dong-Ho (School of Electronics and Electrical Engineering, Korea University)
Jung, Kang-Min (School of Electronics and Electrical Engineering, Korea University)
Kim, Tae-Geun (School of Electronics and Electrical Engineering, Korea University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.47, no.6, 2010 , pp. 1-6 More about this Journal
Abstract
We present simulation results on DC characteristics of AlGaN/GaN HEMT having stair-type gate electrodes, in comparison with those of the conventional single gate AlGaN/GaN HEMTs and field-plate enhanced AlGaN/GaN HEMTs. In order to reduce the internal electric field near the gate electrode of conventional HEMT and thereby to increase their DC characteristics, we applied three-layered stacking electrode schemes to the standard AlGaN/GaN HEMT structure. As a result, we found that the internal electric field was decreased by 70% at the same drain bias condition and the transconductance (gm) was improved by 11.4% for the proposed stair-type gate AlGaN/GaN HEMT, compared with those of the conventional single gate and field-plate enhanced AlGaN/GaN HEMTs.
Keywords
Gallium-Nitride (GaN); high-electron mobility transistors (HEMTs); electric-field distribution; DC characteristics;
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