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Analytical Expressions for Breakdown Voltage and Specific On-Resistance of 6H-SiC PN Diodes  

Chung, Yong-Sung (Department of Internet Information, Doowon Technical College)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.46, no.6, 2009 , pp. 1-5 More about this Journal
Abstract
Analytical expressions for breakdown voltage and specific on-resistance of 6H-SiC PN diodes have been derived successfully by extracting an effective ionization coefficient from ionization coefficients for electron and hole in 6H-SiC. The breakdown voltages induced from our analytical model are compared with experimental results. The variation of specific on-resistance as a function of doping concentration is also compared with the one reported previously. Good fits with experimental results are found for the breakdown voltage within 10% in error for the doping concentration in the range of $10^{15}{\sim}10^{18}cm^{-3}$. The analytic results show good agreement with the numerical data for the specific on-resistance in the region of $5{\times}10^{15}{\sim}10^{16}cm^{-3}$.
Keywords
6H-SiC; Effective ionization coefficient; Breakdown voltage; Specific on-resistance;
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