1 |
Y. Taur and T. H. Ning, Fund. of Modern VLSI Devices, Cambridge Univ. Press, 1998
|
2 |
R. Rios, W-K. Shih, A. Shah, S. Mudanai, P. Packan, T. Sandford, and K. Mistry, 'A Three-Transistor Threshold Voltage Model for Halo Processes,' in IEDM Tech. Dig., 2002, pp113-116
DOI
|
3 |
N. Miura, Y. Abe, K. Sugihara, T. Oishi, T. Furukawa, T. Nakahata, K. Shiozawa, S. Maruno, and, Y. Tokuda, 'Junction Capacitance Reduction Due to Self-Aligned Pocket Implantation in Elevated Source/Drain NMOSFETs,' IEEE Trans. Electron Devices, vol. 42, pp 1969-1973, 2001
DOI
ScienceOn
|
4 |
R. Gwoziecki, T. Skotnick, P. Bouillon, and P. Gentil, 'Optimization of Vth Roll-Off in MOSFET's with Advanced Channel Architecture-Retrograde Doping and Pockets,' IEEE Trans. Electron Devices, vol. 46, pp 1551-1561, 1999
DOI
ScienceOn
|
5 |
K. M. Cao, W. Liu, X. Jin, K. Green, J. Krick, T. Vrotsos, and C. Hu, 'Modeling of Pocket Implanted MOSFETs for Anomalous Analog Behavior,' in IEDM Tech. Dig., 1999, pp 171-174
DOI
|
6 |
B. Yu, C. H. J. Wann, E. D. Nowak, K. Noda, and C. Hu, 'Short-Channel Effect Improved by Lateral Channel-Engineering in Deep-Submicronmeter MOSFET's,' IEEE Trans. Electron Devices, vol. 44, pp 627-634, 1997
DOI
ScienceOn
|
7 |
Hoewoo Koo, Kieyoung Lee, Kyungho Lee, Tor A. Fjeldly, Michael S. Shur, 'Analysis of the Anomalous Drain Current Characteristics of Halo MOSFETs,' Solid State Electron., vol. 47, pp 99-106, 2003
DOI
ScienceOn
|
8 |
B. Boukriss, H. Haddara, S. Cristoloveanu, and A. Chovet, 'Modeling of the 1/f Noise Overshoot in Short-Channel MOSFET's Locally Degraded by Hot-Carrier Injection,' IEEE Electron Device Letters, vol. 10. pp 433-436, 1989
DOI
ScienceOn
|
9 |
Zeynep Celik-Butler and Petr Vasina, 'Channel Length Scaling of 1/f Noise in 0.18 Technology MDD n-MOSFETs,' Solid State Electron., vol. 43, pp 1695- 1701, 1999
DOI
ScienceOn
|
10 |
Y. Okumura, M. Shirahata, A. Hachisuka, T. Okudaira, H. Aruma, and T. Matsukawa, 'Source-to-Drain Nonuniformly Doped Channel(NUDC) MOSFET Structure for High Current Drivability and Threshold Voltage Controll-ability,' IEEE Trans. Electron Devices, vol. 39, pp 2541-2552, 1992
DOI
ScienceOn
|
11 |
Ming-Horn Tsai and Tso-Ping Ma, 'The Impact of Device Scaling on the Current Fluctuation in MOSFETs,' IEEE Trans. Electron Devices, vol. 41, pp 2061- 2068, 1994
DOI
ScienceOn
|
12 |
H. S. Min, 'Unified Theory of Noise in Nondegenerate Semiconductors,' J. Appl. Phys., vol. 61,4549-4565, 1987
DOI
|
13 |
K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, 'A Unified Model for the Flicker Noise in Metal-Oxide-Semiconductor Field-Effect Transistors,' IEEE Trans. Electron Devices, Vol. 37, pp 654-665, 1990
DOI
ScienceOn
|
14 |
A. van der Ziel, 'Noise in Solid State Devices and Circuits,' John Wiely & Sons, 1986
|
15 |
H. Hwang, D. H. Lee, J. M. Hwang, 'Degradation of MOSFETs Drive Current Due to Halo Ion Implantation,' in IEDM Tech. Dig., 1999, pp 567-570
DOI
|