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An Analysis of the 1/f Noise Characteristics of Pocket Implanted MOSFETS  

이병헌 (충북대학교 전자공학과)
이기영 (충북대학교 전자공학과)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.41, no.3, 2004 , pp. 1-8 More about this Journal
Abstract
The anomalous behavior of the 1/f noise of halo or pocket ion implanted MOSFETs is investigated. The model for the anomalous 1/f noise behaviors of MOSFETs, which consist of inhomogeneous conductance along the channel is improved within a regional approximation as previous works and presented in a fen directly applicable to halo MOSFETs. The presented model reduces to the previous results, discussed in the linear region operation, for small drain bias. Comparisons with experimental results show that the 1/f model based on the regional approach can be applicable for limited ranges, especially for sufficiently large gate bias voltages.
Keywords
Pocket Implanted MOSFET; 1/f Noise; Regional Approximation;
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