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A Unified Voltage Generator Which Merges the Pumping Capacitor of Boosted Voltage Generator and Substrate Voltage Generator  

신동학 (삼성전자 DRAM 설계실)
장성진 (삼성전자 DRAM 설계실)
전영현 (삼성전자 DRAM 설계실)
이칠기 (성균관대학교 정보통신공학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.40, no.11, 2003 , pp. 45-53 More about this Journal
Abstract
This paper describes a Unified Voltage Generator that merges the pumping capacitors of boosted voltage generator (VPP) and substrate voltage generator (VBB) for DRAM. This unified voltage generator simultaneously supplies VPP and VBB voltages by using one pumping capacitor and one oscillator. The proposed generator is realized by 0.14${\mu}{\textrm}{m}$DRAM process. The generator reduces the power consumption to 30%, the area of total generator to 40% and the area of pumping capacitor to 29.6%, and improves the pumping efficiency to 13.2% at 2.0V supply voltage. In addition, the generator adopts the charge recycling technique for precharging the pumping capacitor during the period of precharge, thatcan reduces the precharge current to 75%.
Keywords
DRAM; Voltage Generator; Unified Pumping Capacitor;
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