Design of High-gain W-band MMIC Amplifier Using Source Feedback
![]() |
Park, Sang-Min
(Kwangwoon University)
Kim, Young-Min (Seoul National University) Koh, Yu-Min (Seoul National University) Seo, Kwang-Seok (Seoul National University) Kwon, Young-Woo (Seoul National University) Jeong, Jin-Ho (Sogang University) |
1 |
Sungwon Kim, Yumin Koh, and Kwangseok Seo, "High performance 70 nm |
2 |
K. C. Hwang, P. Ho, M. Y. Kao, S. T. Fu, J. Liu, P. C. Chao, P. M. Smith, and A. W. Swanson, "W-band high power passivated 0.15 |
3 | K. H. G, Duh, S. M. J, Liu, M. Y. Kao, S. C. Wang, O. S. A. Tang, P. Ho, P. C. Chao, and P. M. Smith, "Advanced millimeter-wave InP HEMT MMIC's," in Proc. Indium Phosphide and Related Materials, pp. 493-496, 1993. |
4 | J. W. Archer, R. Lai, "Ultra-Low-Noise InP-MMIC Amplifiers for 85-115 GHz," 2000 Asia-Pacific Microwave Conference, pp. 173-176, Dec 2000. |
5 | C. Schworer, A. Tessmann, M. Leich, A. Leuther, S. Kudszus, A. Bessemoulin, and M. Schlechtweg, "Coplanar High Performance MMICs in MHEMT and PHEMT Technology for Applications up to 100 GHz," in Proc. Gallium Arsenide & Other Semiconductors Application Symposium, pp. 511-514, Milan, Sep 2002. |
6 | P. C. Chao, A. J. Tessmer, Kuang-Hann G. Duh, Pin Ho, Ming-Yih Kao, Phillip M. Smith, James M. Ballingall, S. M. J. Liu, and A. A. Jabra, "W-band low-noise InAlAs/InGaAs lattice-mat ched HEMT's," IEEE Electron Device Letters, Vol. 11, pp. 59-62, Jan 1990. DOI ScienceOn |
7 |
C. S. Whelan, W. E. Hoke, R. A. McTaggart, S. M. Lardizabal, P. S. Lyman, P. F. Marsh, and T. E. Kazior, "Low Noise |
8 | K. C. Hwang, P. C. Cho, C. Creamer, K. B. Nichols, S. Wang, D. T. Kong, D. Dugas, and G. Patton, "Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMTs," IEEE Electron Device Letters, Vol. 20, No. 11, pp. 551-553, Nov 1999. DOI ScienceOn |
9 | Arnulf Leuther, Rainer Weber, Michael Dammann, Michael Schlechtweg, Michael Mikulla, Martin Walther, Gunter Weimann, "Metamorphic 50 nm InAs-Channel HEMT," Int. Conf. Indium Phosphide and Related Materials, pp. 129-132, May 2005. |
10 | Mikael Malmkvist, Anders Mellberg, and Jan Grahn, "A W-band MMIC amplifier using 70-nm gate length InP HEMT technology," in Proc, Gallium Arsenide & Other Semiconductor Application Symposium, pp. 165-168, Oct 2005. |
11 | C. S. Whelan, P. F. Marsh, W. E. Hoke, R. A. McTaggart, C. P. McCarroll, and T. E. Kazior, "GaAs Metamorphic HEMT (MHEMT): An Attractive Alternative to InP HEMTs for High Performance Low Noise and Power Applications," in Proc. Indium Phosphide and Related Materials, pp. 337-340, May 2000. |
12 | Mou Shouxian, Ma Jianguo, Yeo Kiat Seng, and Do Manh Anh, "An Integrated Dual-band Low Noise Amplifier for GSM and Wireless LAN Applications," Int. Conf. System On Chip, pp. 67- 70, Sep 2003. |
13 | Mou Shouxian, Ma Jianguo, Yeo Kiat Seng, and Do Manh Anh, "An Integrated SiGe RF Bandpass Low Noise Amplifier for Multi-band Wireless Communication Applications," 2003 Asia-Pacific Conference, pp. 420-424, Sept 2003. |
![]() |