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Dual-Band High-Efficiency Class-F Power Amplifier using Composite Right/Left-Handed Transmission Line  

Choi, Jae-Won (Information and Telecommunication Engineering, Soongsil University)
Seo, Chul-Hun (Information and Telecommunication Engineering, Soongsil University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea TC / v.45, no.8, 2008 , pp. 53-59 More about this Journal
Abstract
In this paper, a novel dual-band high-efficiency class-F power amplifier using the composite right/left-handed (CRLH) transmission lines (TLs) has been realized with one RF Si lateral diffusion metal-oxide-semiconductor field effect transistor (LDMOSFET). The CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. Because the control of the all harmonic components is very difficult in dual-band, we have managed only the second- and third-harmonics to obtain the high efficiency with the CRLH TL in dual-band. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency. Two operating frequencies are chosen at 880 MHz and 1920 MHz in this work. The measured results show that the output power of 39.83 dBm and 35.17 dBm was obtained at 880 MHz and 1920 MHz, respectively. At this point, we have obtained the power-added efficiency (PAE) of 79.536 % and 44.04 % at two operation frequencies, respectively.
Keywords
Class-F Power Amplifier; Dual-Band; LDMOS; High Efficiency; Composite Right/Left-Handed Transmission Line;
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