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Design of a Dual Band High PAE Power Amplifier using Single FET and Class-F  

Kim, Seon-Sook (Information and Telecommunication Engineering, Soongsil University)
Seo, Chul-Hun (Information and Telecommunication Engineering, Soongsil University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea TC / v.45, no.1, 2008 , pp. 110-114 More about this Journal
Abstract
In this paper, high efficient class F power amplifier with dual band has been realized. Dual band power amplifier have used modify stub matching for single FET, center frequency 2.14GHz and 5.2GHz respectively. Dual band amplifier is 32.65dBm output power, gain 11dB and PAE 36% at the 2.14GHz, 7dB gain at the 5.2GHz. Design of a dual band class F power amplifier using harmonic control circuit. The measured are 9.9dB gain, 30dBm output power and PAE 55% at the 2.14GHz, 11.7dB gain at the 5.2GHz. This paper is being used the load-pull method and it maximizes output power and it is using the only one transistor in the paper. As a result, this research will obtain a dual band high PAE power amplifier.
Keywords
Class F; PA; dual band; efficient;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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