Browse > Article

Thermal Memory Effect Modeling and Compensation in Doherty Amplifier for Pre-distorter  

Lee, Suk-Hui (Dept. of Electronics Eng. Dankook University)
Bang, Sung-Il (Dept. of Electronics Eng. Dankook University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea TC / v.44, no.4, 2007 , pp. 65-71 More about this Journal
Abstract
Doherty amplifier has more efficiency and distortion than general amplifier. These distortion classified amplitude distortion and phase distortion, memory effect distortion. This paper reports on an attempt to investigate, model and quantity the contribution of the electrical nonlinearity effects and the thermal memory effects to a doherty amplifier's distortion generation and suggests thermal memory effect compensator for pre-distorter. Also this paper reports on the development of an accurate dynamic expression of the instantaneous junction temperature as a function of the instantaneous dissipated power. The parameters of suggested model suppress thermal memory effects doherty amplifier with pre-distorter. Pre-distorter with electrothermal memory effect compensator for doherty amplifier enhanced ACLR performance about 22 dB than general doherty amplifier. Experiment results were mesured by 50W LDMOS Doherty amplifier and pre-distorter with electrothermal memory effect compensator was simulated by ADS.
Keywords
Doherty amplifier; distortion; electro thermal; memory effect; pre-distorter;
Citations & Related Records
연도 인용수 순위
  • Reference
1 A. Rabany, L. Nguyen, and D. Rice, 'Memory effect reduction for LDMOS bias circuits,' Microwave J., pp. 124-130, Feb. 2003
2 Y. Youngoo, Y. Jeahyok, N. Joongjin, K. Bumman, and P. Myungkyu, 'Measurement of two-tone transfer characteristics of high-power amplifiers,' IEEE Trans. Microwave Theory Tech., vol. 49, pp. 568-571, Mar. 2001   DOI   ScienceOn
3 J. H. K. Vuolevi, T. Rahkonen, and J. P. A. Manninen, 'Measurement technique for characterizing memory effects in RF power amplifiers,' IEEE Trans. Microwave Theory Tech., col. 49, pp. 1383-1389, Aug. 2001   DOI   ScienceOn
4 W. Bosch and G. Gatti, ' Measurement and simulation of memory effects in predistortion linearizers,' IEEE Trans. Microwave Theory Tech., vol. 37, pp. 1885-1890, Dec. 1989   DOI   ScienceOn
5 J.S .Kenny, W. Woo, L. Ding, R. Raich, and T. Zhou 'The impact of memory effects on predistortion linearization of RF power amplifier' in 8th Int. Microwave and Optical Technology Symp., Montreal, QC, Canada, June 2001, pp. 189-193
6 S. Boumaiza and F. M. Ghannouchi, 'Realistic power-amplifiers characterization with application to baseband digital predistortion for 3G base stations,' IEEE Trans. Microwave Theory Tech., vol.50, pp.3016-3021, Dec. 2002   DOI   ScienceOn