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Giga WDM-PON based on ASE Injection R-SOA  

Shin Hong-Seok (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.)
Hyun Yoo-Jeong (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.)
Lee Kyung-Woo (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.)
Park Sung-Bum (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.)
Shin Dong-Jae (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.)
Jung Dae-Kwang (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.)
Kim Seung-Woo (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.)
Yun In-Kuk (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.)
Lee Jeong-Seok (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.)
Oh Yun-Je (Next Generation Technology Team, Telecommunication R&D center, Samsung Electronics Co.)
Park Jin-Woo (Department of Electronics Engineering, Korea University)
Publication Information
Abstract
Reflective semiconductor optical amplifiers(R-SOAs) were designed with high gain, wide optical bandwidth, high thermal reliability and wide modulation bandwidth in TO-can package for the transmitter of wavelength division multiplexed-passive optical network(WDM-PON) application. Double trench structure and current block layer were introduced in designing the active layer of R-SOA to enable high speed modulation. The injection power requirement and the viable temperature range of WDM-PON system are experimentally analysed in based on Amplified Spontaneous Emission(ASE)-injected R-SOAs. The effect of the different injection spectrum in the gain-saturated R-SOA was experimentally characterized based on the measurements of excessive intensity noise, Q factor, and BER. The proposed spectral pre-composition method reduces the bandwidth of injection source below the AWG bandwidth and thereby avoids spectrum distortion impeding the intensity noise reduction originated from the amplitude squeezing.
Keywords
Optical communication; wavelength division multiplexing; passive optical network; optical access network; reflective semiconductor optical amplifier;
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