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Implementation of a CMOS RF Transceiver for 900MHz ZigBee Applications  

Kwon, J.K. (High speed circuit and system Lab. Yonsei University)
Park, K.Y. (High speed circuit and system Lab. Yonsei University)
Choi, Woo-Young (High speed circuit and system Lab. Yonsei University)
Oh, W.S. (SoC Research Center, KETI)
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Abstract
In this paper, we describe a 900MHz CMOS RF transceiver using an ISM band for ZigBee applications. The architecture of the designed rx front-end, which consists of a low noise amplifier, a down-mixer, a programmable gain amplifier and a band pass filter. And the tx front-end, which consists of a band pass filter, a programmable gain amplifier, an up-mixer and a drive amplifier. A low-if topology is adapted for transceiver architecture, and the total current consumption is reduced by using a low power topology. Entire transceiver is verified by means of post-layout simulation and is implemented in 0.18um RF CMOS technology. The fabricated chip demonstrate the measured results of -92dBm minimum rx input level and 0dBm maximum tx output level. Entire power consumption is 32mW(@1.8VDD). Die area is $2.3mm{\times}2.5mm$ including ESD protection diode pads.
Keywords
ZigBee; transceiver; CMOS; Low-IF; Low-power;
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