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Design of Impulse generator Using Gain-Switched Semiconductor Laser for UWB  

Kwon Soon-young (Department of Electronic Engineering Myongji University)
Kim Bum-in (Department of Electronic Engineering Myongji University)
Park Chong-dae (Department of Electronic Engineering Myongji University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea TC / v.42, no.6, 2005 , pp. 61-66 More about this Journal
Abstract
In this paper, we implemented a impulse generator, the one of the part in UWB(Ultra Wide Band) system using step recovery diode(SRD) and gain-switced semiconductor laser. The impulse generator was consisted of four stages; The first stage used SRD to generate the first impulse for gain switching. The second stage controled current for the suitable gain switching condition. The third was the second impulse generator to generate gaussian pulse. For gain switching, the first impulse was applied to semiconductor laser. In the last stage the gain switched impulse was converted into mono-gaussian pulse. The measured mono-gaussian pulse was 360 psec pulse-width and $-70mV \~ +50mV$ amplitude in time domain. In frequency domain its magnitude and bandwidth was, respectively, -41dBm and 3.6GHz. Accordingly, the impulse generator that we suggested was suitable for UWB systems.
Keywords
UWB; Impulse; Gain-switching; Gaussian mono pulse; SRD;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
연도 인용수 순위
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