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High Gain and Broadband Millimeter-wave MHEMT Cascode Amplifier  

An, Dan (Millimeter-wave INnovation Technology research)
Lee, Bok-Hyung (Millimeter-wave INnovation Technology research)
Lim, Byeong-Ok (Millimeter-wave INnovation Technology research)
Lee, Mun-Kyo (Millimeter-wave INnovation Technology research)
Baek, Yong-Hyun (Millimeter-wave INnovation Technology research)
Chae, Yeon-Sik (Millimeter-wave INnovation Technology research)
Park, Hyung-Moo (Millimeter-wave INnovation Technology research)
Rhee, Jin-Koo (Millimeter-wave INnovation Technology research)
Publication Information
Journal of the Institute of Electronics Engineers of Korea TC / v.41, no.8, 2004 , pp. 105-111 More about this Journal
Abstract
In this paper, millimeter-wave high gain and broadband MHEMT cascode amplifiers were designed and fabricated. The 0.1 ${\mu}{\textrm}{m}$ InGaAs/InAlAs/GaAs Metamorphic HEMT was fabricated for cascode amplifiers. The DC characteristics of MHEMT are 640 mA/mm of drain current density, 653 mS/mm of maximum transconductance. The current gain cut-off frequency(f$_{T}$) is 173 GHz and the maximum oscillation frequency(f$_{max}$) is 271 GHz. By using the CPW transmission line, the cascode amplifier was designed the matched circuit for getting the broadband characteristics. The designed amplifier was fabricated by the MHEMT MIMIC process that was developed through this research. As the results of measurement, the 1 stage amplifier obtained 3 dB bandwidth of 37 GHz between 31.3 to 68.3 GHz. Also, this amplifier represents the S21 gain with the average 9.7 dB gain in bandwidth and the maximum gain of 11.3 dB at 40 GHz. The 2 stage amplifier has the broadband characteristics with 3 dB bandwidth of 29.5 GHz in the frequency range from 32.5 to 62.0 GHz. The 2 stage cascode amplifier represents the high gain characteristics with the average gain of 20.4 dB in bandwidth and the maximum gain of 22.3 dB at 36.5 GHz.z.z.
Keywords
CPW; Cascode; Metamorphic HEMT; Amplifier; Millimeter-wave;
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Times Cited By KSCI : 1  (Citation Analysis)
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1 Hassan Maher, Jean Decobert, Aline Falcou, Michel Le Pallec, George Post, Yves I. Nissim, and Andre Scavennec, 'A Triple Channel HEMT on InP (Camel HEMT) for Large-Signal High-Speed Application,' IEEE Trans. Elec. Device, vol. 46, no. 1, pp. 32-37, Jan. 1999   DOI   ScienceOn
2 Axel Tessmann, William H. Haydl, Axel Hulsmann, and Michael Schlechtweg, 'High-Gain Cascode MMIC's in Coplanar Technology at W-band Frequencies,' IEEE Microwave Guided Wave Lett., vol. 8, no. 12, Dec. 1998   DOI   ScienceOn
3 Wendell M. T. Kong, Sujane C. Wang, Pane-Chane Chao,Der-Wei Tu,Kuichul Hwang, O. S. A. Tang, Shih-Ming Liu, Pin Ho, Kirby Nichols, and John Heaton, 'Very High Efficiency V-Band Power InP HEMT MMICs,' IEEE Elec. Device Lett., vol. 21, no. 11, pp. 521-523, Nov. 2000   DOI   ScienceOn
4 C. S. Whelan, W. E. Hoke, R. A. McTaggart, S. M. Lardizabal, P. S. Lyman, P. E. Marsh, T. E. Kazior, 'Low Noise In0.32(AlGa)0.68As/In0.43Ga0.57As Meta-morphic HEMT on GaAs substrate with 850 mW/mm output power density,' IEEE Elec. Device Lett., vol. 21, no. 1, pp. 5-8, Jan. 2000   DOI   ScienceOn
5 Dan An, Bok Hyung Lee, Yeon Sik Chae, Hyun Chang Park, Hyung Moo Park, and Jin Koo Rhee, 'Low LO Power V-band CPW Down-Converter Using a GaAs PHEMT,' J. Korean Phys. Soc., vol. 41, no. 6, pp. 1013-1016, Dec. 2002
6 Bok-Hyung Lee, Dong-Hoon Shin, Sam-Dang Kim, and Jin-Koo Rhee, 'High Maximum Frquency of Oscillation of 0.1${\mu}$m Off-set T-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic HEMTs,' J. Korean Phys. Soc., vol. 43, no. 4, pp. 427-430, Sep. 2003
7 Sedra/Smith, Microelectronic Circuits, Oxford
8 Dan An, Sung Chan Kim, Woo Suk Sul, Hyo Jong Han, Hyung Moo Park, and Jin Koo Rhee, 'High Conversion gain Millimeter-wave ${\times}4$ Sub-harmonic Mixer With Cascode 4th harmonic Generator,' Microwave Optical Tech. Lett., vol. 41, no. 6, pp. 490-493, June 2004   DOI   ScienceOn
9 G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, 'A New Method for Determining the FET Small-Signal Equivalent Circuit,' IEEE Trans. Microwave Theory & Tech., vol. 36, no. 7, pp. 1151-1159, July 1988   DOI   ScienceOn
10 M. Y. Jeon, B. G. Kim, Y. J. Jeon, and Y. H. Jeong, 'A Technique for Extracting Small-Signal Equivalent-Circuit Elements of HEMTs,' IEICE Trans. Electron, vol. E82-C, no. 11, pp. 1968-1976, Nov. 1999
11 Il-Hyeong Lee, Seong-Dae Lee, and Jin-Koo Rhee, 'Studies on Air-Bridge Processes for mm-wave MMIC's Application,' J. Korean Phys. Soc., vol. 35, no. 12, pp. S1043-S1046, 1999
12 J. W. Shin, Y. S. Yoon, S. D. Lee, H. C. Park and J. K. Rhee, 'Effects of He gas on hydrogen content and passivation of GaAs PHEMT with SiN films,' 2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD), pp. 121-124, 2000