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High Efficiency Q-band MIMIC HEMT-Oscillator Operating at Low Voltages  

Lee, Mun-Kyo (Millimeter-wave INnovation Technology research center, Dongguk University)
An, Dan (Millimeter-wave INnovation Technology research center, Dongguk University)
Lee, Bok-Hyung (Millimeter-wave INnovation Technology research center, Dongguk University)
Kim, Sung-Chan (Millimeter-wave INnovation Technology research center, Dongguk University)
Lim, Byeong-Ok (Millimeter-wave INnovation Technology research center, Dongguk University)
Han, Hyo-Jong (Millimeter-wave INnovation Technology research center, Dongguk University)
Chae, Yeon-Sik (Millimeter-wave INnovation Technology research center, Dongguk University)
Shin, Dong-Hoon (Millimeter-wave INnovation Technology research center, Dongguk University)
Kim, Yong-Hoh (Electronic Engineering, Paichai University)
Park, Hyung-Moo (Millimeter-wave INnovation Technology research center, Dongguk University)
Rhee, Jin-Koo (Millimeter-wave INnovation Technology research center, Dongguk University)
Publication Information
Abstract
In this paper, we present the low voltage and high efficiency Q-band MIMIC oscillator using device-level power combined structure. The oscillator was successfully integrated by using 0.1 ${\mu}{\textrm}{m}$ GaAs PHEMTS and the CPW transmission line. We show that the highest efficiency is 19 % with an output power of 2.6 ㏈m at a frequency of 34.56 ㎓. The operating voltage of the oscillator is 2.2 V which is lower voltage than that of previously reported oscillators at Q-band. And the maximum output power of 6.7 ㏈m was obtained at a frequency of 34.56 ㎓.
Keywords
Oscillator; Efficiency; MIMIC; HEMT;
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