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A Study on the Fabrication of K-band Local Oscillator Used Frequency Doubler Techniques  

김장구 (국립목포해양대학교 전자통신공학과)
박창현 (국립목포해양대학교 전자통신공학과)
최병하 (국립목포해양대학교 전자통신공학과)
Publication Information
Journal of the Institute of Electronics Engineers of Korea TC / v.41, no.10, 2004 , pp. 109-117 More about this Journal
Abstract
In this paper, a K-band local oscillator composed of a VCDRO(Voltage Controlled Dielectric Resonator Oscillator), GaAs MESFET, and Reflector type frequency doubler has been designed and fabricated. TO obtain a good phase noise performance of a VCDRO, a active device was selected with a low noise figure and a low flicker noise MESFET and a dielectric resonator was used for selecting stable and high oscillation frequency. Especially, to have a higher conversion gain than a conventional doubler as well as a good harmonic suppression performance with circuit size reduced a doubler structure was employed as the Reflector type composed of a reflector and a open stub of quarter wave length for rejecting the unwanted harmonics. The measured results of fabricated oscillator show that the output power was 5.8 dBm at center frequency 12.05 GHz and harmonic suppression -37.98 dBc, Phase noise -114 dBc at 100 KHz offset frequency, respectively, and measured results show of fabricated frequency doubler, the output power at 5.8 dBm of input power is 1.755 dBm conversion gain 1.482 dB, harmonic suppression -33.09 dBc, phase noise -98.23 dBc at 100 KHz offset frequency, respectively. This oscillator could be available to a local oscillator in K-band which used frequency doubler techniques.
Keywords
VCDRO; Phase noise; frequency doubler; Reflector; Conversion gain;
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