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Implementation of High-Q Bondwire Inductors on Silicon RFIC  

최근영 (아주대학교 전자공학부)
송병욱 (아주대학교 전자공학부)
김성진 (아주대학교 전자공학부)
이해영 (아주대학교 전자공학부)
Publication Information
Journal of the Institute of Electronics Engineers of Korea TC / v.39, no.12, 2002 , pp. 559-565 More about this Journal
Abstract
Today, because a quality factor of the inductor fabricated on silicon substrate for RFIC is under 12, the realization of inductor haying high-Q is essential. In this paper, two inductors having improved Q-factor are proposed and fabricated using a bondwire on silicon substrate. Also for the PGS is applied to the same inductors, four inductors are fabricated finally The bondwire Inductors have the relatively low conductor loss due to wide cross-section area and they can reduce the parastic capacitance very much because they are located in the air. Simulation and measurement results show that the proposed inductors have much more improved Q-factor, 15, than a conventional spiral inductor at 1.5 GHz. Because of the use of an automatic bonding machine, we can fabricate the high - Q inductors very easily, repeatedly.
Keywords
inductor; bondwire; high-Q;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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1 C. P. Yue, S. S. Wong, 'On-chip spiral inductors with patterned ground shields for Si-based RF Ics' IEEE Journal of Solid-State Circuits, Vol. 33, Issue. 5, pp. 743-752, May 1998   DOI   ScienceOn
2 C. P. Yue, S. S. Wong, 'A study on substrate effects of silicon-based RF passive components' IEEE MTT-S International Microwave Symposium Digest, VOL. 4, pp. 1625-1628, 1999   DOI
3 K. O, 'Estimation methods for quality factors of inductors fabricated in silicon integrated circuit process technologies', IEEE Journal of Solid-State Circuits, Vol. 33, pp. 1249-1252, Aug. 1998   DOI   ScienceOn
4 Y. E. Chen, D. Bien, D. Heo, J. Laskar, 'Q-enhancement of spiral inductor with N/sup+/-diffusion patterned ground shields', IEEE MTT-S International Microwave Symposium Digest, Vol.2, pp. 1289-1292, 2001   DOI
5 Min Park, Seong hearn Lee, Cheon Soo Kim, Hyun Kyu Yu, Kee Soo Nam, 'The detailed analysis of high Q CMOS-compatible microwave spiral inductors in silicon technology', IEEE Transactions on Electron Devices, VOL. 45, pp. 1953-1959, Sept. 1998   DOI   ScienceOn
6 이용구, 이해영, '플라스틱 패키지되는 MMIC를 위한 저가격 고품질의 수직형 본드와이어 인덕터' 대한전자공학회지, 35(D 7), pp. 17-24, 1998년 6월   과학기술학회마을
7 송병욱, 이해영, '고품질 본드와이어 집적형 트랜스포머' 대한전자공학회지 39(TC 2), 23-33, 2002년 2월   과학기술학회마을
8 Sung-Jin Kim, Yong-Goo Lee, Sang-Ki Yun, Hai-Young Lee, 'Novel high-Q bondwire inductors for RF and microwave monolithic integrated circuits' IEEE MTT-S International Microwave Symposium Digest, Vol. 4, pp. 1621-1624, 1999   DOI
9 N. Camiller, J. Costa, D. Lovelace, D. Ngo, 'Silicon MOSFETs, the microwave device technology for the 1990s,' IEEE MTT-S International, Microwave Symposium Digest, pp. 545-548, 1993   DOI
10 K. B. Ashby, I. A. Koullias, W.C. Finley, J.J. Bastek, S. Moinian, 'High Q inductors for wireless applications in a complementary silicon bipolar process', IEEE Journal of Solid-State Circuits, Vol.31, pp. 4-9, Jan. 1996   DOI   ScienceOn
11 K. Murata, T. Hosaka, Y. Sugimoto, 'Effect of a ground shield of a silicon on-chip spiral inductor' Asia-Pacific Microwave Conference, pp. 177-180, 2000   DOI