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A 2.5 V 10b 120 MSample/s CMOS Pipelined ADC with High SFDR  

Park, Jong-Bum (Dept. of Electronic Engineering, Sogang University)
Yoo, Sang-Min (Dept. of Electronic Engineering, Sogang University)
Yang, Hee-Suk (Dept. of Electronic Engineering, Sogang University)
Jee, Yong (Dept. of Electronic Engineering, Sogang University)
Lee, Seung-Hoon (Dept. of Electronic Engineering, Sogang University)
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Abstract
This work describes a 10b 120 MSample/s CMOS pipelined A/D converter(ADC) based on a merged-capacitor switching(MCS) technique for high signal processing speed and high resolution. The proposed ADC adopts a typical multi-step pipelined architecture to optimize sampling rate, resolution, and chip area, and employs a MCS technique which improves sampling rate and resolution reducing the number of unit capacitor used in the multiplying digital-to-analog converter (MDAC). The proposed ADC is designed and implemented in a 0.25 um double-poly five-metal n-well CMOS technology. The measured differential and integral nonlinearities are within ${\pm}$0.40 LSB and ${\pm}$0.48 LSB, respectively. The prototype silicon exhibits the signal-to-noise-and-distortion ratio(SNDR) of 58 dB and 53 dB at 100 MSample/s and 120 MSample/s, respectively. The ADC maintains SNDR over 54 dB and the spurious-free dynamic range(SFDR) over 68 dB for input frequencies up to the Nyquist frequency at 100 MSample/s. The active chip area is 3.6 $mm^2$(= 1.8 mm ${\times}$ 2.0 mm) and the chip consumes 208 mW at 120 MSample/s.
Keywords
ADC;pipeline;MCS;SFDR;MDAC;CFCS;병합캐패시티;
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