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http://dx.doi.org/10.5370/KIEE.2012.61.9.1296

Fabrication and Electrical Properities of Semiconducting YBa2Cu3O7-x thin Film or Application of IR Sensors  

Jeong, Jae-Woon (경상대 공대 세라믹공학과)
Jo, Seo-Hyeon (경상대 공대 세라믹공학과)
Lee, Sung-Gap (경상대 공학원 세라믹공학과)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.61, no.9, 2012 , pp. 1296-1299 More about this Journal
Abstract
$YBa_2Cu_3O_{7-x}$ thin films were fabricated by the spin-coating method on $SiO_2$/Si substrate using an alkoxide-based sol-gel method. The structural and electrical properties were investigated for various 1st annealing temperature. Due to the formation of the polycrystalline single phase, synthesis temperature was observed at around $720^{\circ}C-800^{\circ}C$. $YBa_2Cu_3O_{7-x}$ thin films with the 1st annealing temperature of $450^{\circ}C{\sim}500^{\circ}C$ showed the single XRD patterns without the second phase, such as $YBa_2Cu_4O_8$. The thickness of films was approximately $0.23{\mu}m{\sim}0.27{\mu}m$. Aerage grain size, resistance and temperature coefficient of resistance (TCR) of $YBa_2Cu_3O_{7-x}$ thin films with the 1st annealing temperature of $500^{\circ}C$ were $0.27{\mu}m$, $59.7M{\Omega}$ and -3.7 %/K, respecvitely.
Keywords
YBCO; Bolometer; Thin film; TCR;
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