Browse > Article

Reliability Characteristics of Class-E Power Amplifier with load Inductor  

Choi Jin-Ho (부산외국어대학교 컴퓨터공학부)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.55, no.2, 2006 , pp. 68-71 More about this Journal
Abstract
A class-E power amplifier is designed using 0.25$\mu$m standard CNMOS technology at 900MHz and the reliability characteristics are studied with the load network. The reliability characteristics is improved when a finite DC-feed inductor is used instead of RF choke. At the one you halt, the PAE(Power Added Efficiency) decreases from 58.0$\%$ to 35.7$\%$ and output power decreases from 120mW to 74mW in power amplifier using RF choke. However, when a finite DC-feed inductor is used with load the PAE decreases from 58.5$\%$ to 54.8$\%$ and output power decreases from 121mW to 112mW. From the simulated results, the class-E power amplifier with a finite DC-feed inductor shows superior reliability characteristics compared to rower amplifier using RF choke inductor.
Keywords
Class E; RF Choke; DC-Feed;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 R. Castello, et al, 'A 1.3 GHz low phase noise fully tuneable CMOS LC VCO,' IEEE. J. Solid-State Circuits, vol. 35, no. 3, pp. 356-361, Mar. 2000   DOI   ScienceOn
2 P. J. Sulivan, et al, 'Low voltage performance of a microwave CMOS Gilbert cell mixer,' IEEE. J. Solid-State Circuits, vol. 32, pp. 1151-1155, 1997   DOI   ScienceOn
3 R. A. Rafla and M. N. Gamal, 'Design of a 1.5V CMOS integrated 3GHz LNA,' in proc. ISCAS, pp. 440-443, 1999   DOI
4 황영승, 채용두, 오범석, 조연수, 정웅, '2.4GHz 100mW급 고주파 CMOS 전력 증폭기 설계,' 대한전자공학회 통신소사이티 추계학술대회논문집，pp. 335-339, 2003   과학기술학회마을
5 박수양, 전동환, 송한정, 손상희, '0.25um 표준 CMOS 공정을 이용한 RF 전력 증폭기,” 대한전자공학회 추계학술대회논문집，pp. 851-854, 1999   과학기술학회마을
6 W. C. Lin, et al, 'Reliability evaluation and comparison of class-E and class-A power amplifiers with 0.18um CMOS technology,' in Proc. IEEE Int. Reliability Physics Symp., pp. 415-416, 2004
7 A. A. Abidi, 'RF CMOS comes of age,' IEEE VLSI Circuit Dig., no.6, pp. 113-116, Jun. 2003
8 W. C. Lin, T. C. Wu, et al, 'Reliability evaluation of class-E and class-A power amplifiers with nanoscaled CMOS technology,' IEEE Trans. on Electron Devics, vol. 52, no. 7, July 2005   DOI   ScienceOn
9 C. Yoo, and Q. Huang, 'A common-gate switched 0.9W class-E power amplifier with 41% PAE in 0.25um CMOS,' IEEE. J. Solid-State Circuits, vol. 36, no. 5, pp. 823-830, May 2001   DOI   ScienceOn
10 J. E. Chung, et al, 'Low-voltage hot-electron currents and degradation in deep submicronmeter MOSFET's,' IEEE. Trans. on Electron Devices, vol. 37, no. 7, pp. 1651-1657, July 1990   DOI   ScienceOn