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Temperature Monitoring System of Power MOSFET for IPCM  

Choi Nak-Gwon (경남대학교 전자공학과)
Kim Ki-Hyun (한국전기연구원 전력반도체그룹)
Kim Hyoung-Woo (한국전기연구원 전력반도체그룹)
Seo Kil-Soo (한국전기연구원 전력반도체그룹)
Kim Nam-Kun (한국전기연구원 전력반도체그룹)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.55, no.1, 2006 , pp. 20-25 More about this Journal
Abstract
We suggest a novel temperature detection method utilized in temperature monitoring system. Suggested method detects temperature variation by using $R_{ds(on)}$ characteristics of MOSFET, while conventional methods are using extra devices such as a temperature sensor or an over-temperature detection transistor. For voltage detection between drain and source, 10 bits resolution ADC is needed. Therefore possible measurement signal range is about ten mV. If detected temperature's voltage exceed protection temperature's voltage then controller generates OT (Over Temperature) signal to stop MOSFET's trigger signal. Whole process of measurement is controlled by software. Experimental results show that the developed temperature monitoring system can provide the suitable temperature monitoring method and difference between detected and data sheet value of the suggested system is about $3\%$.
Keywords
IPM; Temperature Monitoring; Over Temperature Protection; MOSFET;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
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