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The Growth Mechanism of Ga$_2$O$_3$ Nanobelt  

Lee, Jong-Su (고려대학 전기공학과)
Park, Gwang-Su (고려대학 전기공학과)
Seong, Man-Yeong (고려대학 전기공학과)
Kim, Sang-Sik (고려대학 전기공학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.51, no.9, 2002 , pp. 408-412 More about this Journal
Abstract
Ga$_2$O$_3$ nanobelts were synthesized from mechanically ground GaN powders with a thermal annealing in a nitrogen atmosphere. The nanobelts are with the range of about 10~200nm width and 10~50nm thickness. The nanobelt, growing along the direction perpendicular to the (010) plane and enclosed by (101) and (101) facets, shows no defect and no dislocation.
Keywords
Ga$_2$O$_3$; nanobelt; growth mechanism;
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