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http://dx.doi.org/10.3795/KSME-B.2014.38.10.831

Relative Influence of Surface and Interfacial Defects in Hydrothermally Grown Nanostructured ZnO  

Park, Cheolmin (Nano-Mechatronics department, Univ. of Science and Technology (UST))
Lee, Jihye (Nano-Convergence Mechanical Systems Research Division, Korea Inst. of Machinery & Materials (KIMM))
So, Hye-Mi (Nano-Convergence Mechanical Systems Research Division, Korea Inst. of Machinery & Materials (KIMM))
Chang, Won Seok (Nano-Mechatronics department, Univ. of Science and Technology (UST))
Publication Information
Transactions of the Korean Society of Mechanical Engineers B / v.38, no.10, 2014 , pp. 831-835 More about this Journal
Abstract
The relative concentration of surface and interfacial defects in hydrothermally grown ZnO nanostructures was investigated by a comparison of two samples having different growth temperatures via bias voltage sweep rate under laser illumination of 405 and 355 nm. The current of small ZnO nanostructures (growth temperature of $75^{\circ}C$) decreased when induced more slowly bias voltage sweep rate under the laser illumination. In contrast, the current of large ZnO nanostructures (growth temperature of $90^{\circ}C$) increased. This difference in currents indicates the relation of relative defects concentration between surface and interfacial defects of ZnO nanostructure. Our experimental approach has potential applicability in the analysis of influence on defects in ZnO devices.
Keywords
ZnO; Hydrothermal Growth; Defects; UV Photodetector;
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1 Shalish, I., Temkin, H. and Narayanamurti, V., 2004, "Size-dependent Surface Luminescence in ZnO Nanowires," Physical Review B, 69, 245401_1-245401_4.
2 Look, D. C., Reynolds, D. C., Litton, C. W., Jones, R. L., Eason, D. B. and Cantwell, G., 2002, "Characterization of Homoepitaxial P-type ZnO grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 81, 1830-1832.   DOI   ScienceOn
3 Park, W. I., Yi, G. C., Kim, M. Y. and Pennycook, S. J., 2003, "Quantum Confinement Observed in ZnO/ZnMgO Nanorod Heterostructures," Adv. Mater. 15, 526-529.   DOI   ScienceOn
4 Hirschwald, W. H., 1985, "Zinc Oxide: An Outstanding Example of a Binary Compound Semiconductor.," Acc. Chem. Res. 18, 228-234.   DOI
5 Fortunato, E., Barquinha, P. & Martins, R., 2012, "Oxide Semiconductor Thin-film Transistors: A Review of Recent Advances," Adv. Mater. 24, 2945-2986.   DOI   ScienceOn
6 Jeong, M. C., Oh, B. Y., Ham, M. H., Lee, S. W. and Myoung, J. M., 2007, "ZnO‐Nanowire‐Inserted GaN/ZnO Heterojunction Light‐Emitting Diodes," Small 3, 568-572.   DOI   ScienceOn
7 Ruhle, R. S., Van Vugt, L. K., Li, H. Y., Keizer, N. A., Kuipers, L. and Vanmaekelbergh, D, 2008, "Nature of Sub-band Gap Luminescent Eigenmodes in a ZnO Nanowire," Nano Lett. 8, 119-123.   DOI   ScienceOn
8 Wan, Q., Li, Q. H., Chen, Y. J., Wang, T. H., He, X. L., Li, J. P. and Lin, C. L., 2004, "Fabrication and Ethanol Sensing Characteristics of ZnO Nanowire Gas Sensors," Appl. Phys. Lett. 84, 3654-3656.   DOI   ScienceOn
9 Lee, W. W., Kim, S. B., Yi, J., Nichols, W. T. and Park, W. I., 2011, "Surface Polarity-Dependent Cathodoluminescence in Hydrothermally Grown ZnO Hexagonal Rods," The Journal of Physical Chemistry C, 116, 456-460.
10 Kwon, S., Bang, S., Lee, S., Jeon, S., Jeong, W., Kim, H., Gong, S. C., Chang, H. J., Park, H. and Jeon, H., 2009 "Characteristics of the ZnO Thin Film Transistor by Atomic Layer Deposition at Various Temperatures," Semicond. Sci. Technol. 24, 035015.   DOI   ScienceOn