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http://dx.doi.org/10.3795/KSME-A.2015.39.7.653

Growth of Silicon-Germanium Quantum-dots Through Local Enhancement of Surface Diffusivity  

Kim, Yun Young (Dept. of Mechanical Engineering, Dong-eui Univ.)
Publication Information
Transactions of the Korean Society of Mechanical Engineers A / v.39, no.7, 2015 , pp. 653-657 More about this Journal
Abstract
A numerical investigation to simulate the selective growth of silicon-germanium quantum-dots via local surface diffusivity enhancement is presented. A nonlinear equation for the waviness evolution of film surface is derived to consider the effects of spatially-varying diffusivity, influenced by a surface temperature profile. Results show that the morphology of the initially planar film shapes into an undulated surface upon perturbation, and a steady-state solution describes a fully grown quantum-dot. The present study points toward a fabrication technique that can obtain selectivity for self-assembly.
Keywords
Film Growth; Quantum-dot; Self-assembly;
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