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http://dx.doi.org/10.3795/KSME-A.2004.28.5.547

Molecular Dynamics Simulation of Adhesive Friction of Silicon Asperity  

Park, Seung-Ho (홍익대학교 기계ㆍ시스템디자인공학과)
Cho, Sung-San (홍익대학교 기계ㆍ시스템디자인공학과)
Publication Information
Transactions of the Korean Society of Mechanical Engineers A / v.28, no.5, 2004 , pp. 547-553 More about this Journal
Abstract
A hemispherical asperity moving over a flat plane is simulated based on classical molecular dynamics. The asperity and the plane consist of silicon atoms whose interactions are governed by the Tersoff three-body potential. The gap between the asperity and the plane is maintained to produce attractive normal force in order to investigate the adhesive friction and wear. The simulation focuses on the influence of crystallographic orientation of the contacting surfaces and the moving direction. It is demonstrated that the adhesive friction and wear are lower when crystallographic orientations of the contacting surfaces are different, and also depend on the moving direction relative to the crystal1ographic orientation.
Keywords
Adhesion; Friction; Wear; Asperity; Molecular Dynamics; Tersoff Potential; Silicon;
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Times Cited By KSCI : 1  (Citation Analysis)
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