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http://dx.doi.org/10.3795/KSME-A.2004.28.11.1807

Effects of Friction Energy on Polishing Results in CMP Process  

Lee, Hyun-Seop (부산대학교 정밀기계공학과)
Park, Boum-Young (부산대학교 정밀기계공학과)
Kim, Goo-Youn (부산대학교 정밀기계공학과)
Kim, Hyoung-Jae (부산대학교 정밀기계공학과)
Seo, Heon-Deok (부산대학교 정밀기계공학과)
Jeong, Hae-Do (부산대학교 기계공학부)
Publication Information
Transactions of the Korean Society of Mechanical Engineers A / v.28, no.11, 2004 , pp. 1807-1812 More about this Journal
Abstract
The application of chemical mechanical polishing(CMP) has a long history. Recently, CMP has been used in the planarization of the interlayer dielectric(ILD) and metal used to form the multilevel interconnections between each layers. Therefore, much research has been conducted to understand the basic mechanism of the CMP process. CMP performed by the down force and the relative speed between pad and wafer with slurry is typical tribo-system. In general, studies have indicated that removal rate is relative to energy. Accordingly, in this study, CMP results will be analyzed by a viewpoint of the friction energy using friction force measurement. The results show that energy would not constant in the same removal rate conditions
Keywords
Chemical Mechanical Polishing; Friction Energy; Coefficient of Friction; Removal Rate;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
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