Browse > Article
http://dx.doi.org/10.5916/jkosme.2009.33.1.159

A Study on Characteristics of Coupled Line Employing Periodical Ground Structure on GaAs MMIC  

Kim, Se-Ho (한국해양대학교 전파공학과)
Kang, Suk-Youb (한국해양대학교 전파공학과)
Yun, Young (한국해양대학교 전파공학과)
Abstract
In this study, using a periodical ground structure(PGS) on GaAs monolithic microwave integrated circuit(MMIC), transmission line with a high isolation characteristic was developed for application to compact signal/bias lines of highly integrated MMIC. And the origin of the high isolation characteristic was theoretically investigated. The high isolation characteristic was originated from a resonance between adjacent microstrip lines employing PGS. With only a spacing of $20{\mu}m$, the coupled microstrip line employing PGS showed an isolation value of -47 dB at 60 GHz. The frequency range for high isolation was easily controlled by changing the PGS structure. Above results indicate that microstrip lines employing PGS are very useful for application to compact signal/bias lines of highly integrated MMIC requiring a high isolation characteristics between lines. In addition, equivalent circuit employing closed-form equation for the coupled line with PGS was also extracted.
Keywords
Coupled line; Periodical ground structure(PGS); GaAs; Monolithic microwave integrated circuit(MMIC);
Citations & Related Records
연도 인용수 순위
  • Reference
1 D. M. Pozar, Microwave Engineering, Reading, MA: Addison-Wesley, 1990, pp.183-190
2 B. C. Wadell. Transmission Line Design Handbook, Boston, MA: Artech House, 1991, Ch. 3
3 Y. Yun, K. S. Lee, C. R. Kim, K. M. Kim, and J. W. Jung, "Basic RF characteristics of the microstrip line employing periodically perforated ground metal and its application to highly miniaturized on-chip passive components on GaAs MMIC", IEEE Trans, Microw. Theory Tech., Vol. 54, No. 10, pp. 3805-3817, Oct. 2006   DOI   ScienceOn
4 John R. Long, "Passive Componets for Silicon RF and MMIC Design", IEICE Trans. Electron., Vol. E86-C, No. 6, pp.1022-1031
5 Kazuya Masu, Kenichi OKADA, and Hiroyuki ITO, "RF Passive Componets Using Metal Line on Si CMOS", IEICE Trans. Electron., Vol. E89-C, No. 6, pp.681-691   DOI   ScienceOn