Browse > Article
http://dx.doi.org/10.4150/KPMI.2007.14.4.265

Electromagnetic Wave Absorption Properties of Fe-based Nanocrystalline P/M sheets with Al2O3 additive  

Woo, S.J. (School of Nano-System Engineering, Inje University)
Cho, E.K. (School of Nano-System Engineering, Inje University)
Cho, H.J. (School of Nano-System Engineering, Inje University)
Lee, J.J. (School of Nano-System Engineering, Inje University)
Sohn, K.Y. (School of Nano-System Engineering, Inje University)
Park, W.W. (School of Nano-System Engineering, Inje University)
Publication Information
Journal of Powder Materials / v.14, no.4, 2007 , pp. 265-271 More about this Journal
Abstract
Electromagnetic wave absorbing materials have been developed to reduce electromagnetic interference (EMI) for electronic devices in recent years. In this study, Fe-Si-B-Nb-Cu base amorphous strip was pulverized using a jet mill and an attritor and heat-treated to get flake-shaped nanocrystalline powders, and then the powders were mixed, cast and dried with dielectric $Al_{2}O_{3}$ powders and binders. As a result, the addition of $Al_{2}O_{3}$ powders improved the absorbing properties of the sheets noticeably compared with those of the sheets without dielectric materials. The sheet mixed with 2 wt% $Al_{2}O_{3}$ powder showed the best electromagnetic wave absorption, which was caused by the increase of the permittivity and the electric resistance due to the dielectric materials finely dispersed on the Fe-based powder.
Keywords
Nanocrystalline; Fe-Si-B-Nb-Cu; Permittivity; Electromagnetic wave absorber; $Al_{2}O_{3}$;
Citations & Related Records
연도 인용수 순위
  • Reference
1 K. S. Lee, Y. C. Yoon, G B. Choi, S. S. Kim, J. Y. Lee: J. Kor. Electromagnetic Engineering Society, 16 (2005) 20
2 H. D. Kim: Polymer Science and Technology, 14 (2003) 1   DOI   ScienceOn
3 Y. Yoshizawa, S. Oguma, and K. Yamauchi: J. Appl. Phy., 64 (1988) 10   DOI   ScienceOn
4 G. Herzer: IEEE Trans. Mag., 26(1990)1379   DOI   ScienceOn
5 Y. Takemura, S. Masuda, T. yamada and K. Kakuno: J. Appl. Phys., 79 (1996) 4653   DOI
6 A. Hosoe, K. Nitta, S. Inazawa, K. Yamada, T. Yoshisaka, K. Ikeda: SEI TECHNICAL REVIEW., 54 (2002) 6
7 J. R. Liu, M. Itoh, T. Horikawa, K. Machida, S. Sugimoto and T. Maeda: J. Appl. Phy., 98 (2005) 054305-1   DOI   ScienceOn
8 M. Matsumoto, Y. Miyata: IEEE Trans. Magn., 33 (1997) 6   DOI   ScienceOn
9 K. M. Lim, M. C. Kim, K. A. Lee and C. G Park: J Kor. Inst. Met. & Mater., 41 (2003) 3