Browse > Article

Noise Modeling and Performance Evaluation in Nanoscale MOSFETs  

Lee, Jonghwan (Department of System Semiconductor Engineering, Sangmyung University)
Publication Information
Journal of the Semiconductor & Display Technology / v.19, no.3, 2020 , pp. 82-87 More about this Journal
Abstract
The comprehensive and physics-based compact noise models for advanced CMOS devices were presented. The models incorporate important physical effects in nanoscale MOSFETs, such as the low frequency correlation effect between the drain and the gate, the trap-related phenomena, and QM (quantum mechanical) effects in the inversion layer. The drain current noise model was improved by including the tunneling assisted-thermally activated process, the realistic trap distribution, the parasitic resistance, and mobility degradation. The expression of correlation coefficient was analytically described, enabling the overall noise performance to be evaluated. With the consideration of QM effects, the comprehensive low frequency noise performance was simulated over the entire bias range.
Keywords
Compact Noise Model; Quantum-Mechanical Effects; Low Frequency Correlation; Noise Performance;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Lee J. H. and Bosman G., "Comprehensive Noise Performance of Ultrathin Oxide MOSFETs at Low Frequency," Solid-State Electronics, Vol. 48, pp. 61-71, 2004.   DOI
2 Cappy A., "Noise Modeling and Measurement Techniques," IEEE Transactions on Microwave Theory Technology, Vol. 36, pp. 1-10, 1988   DOI
3 Huang J. Z., Chew W. C., Tang M., and Jiang L., "Efficient Simulation and Analysis of Quantum Ballistic Transport in Nanodevices with AWE," IEEE Transactions on Electron Devices, Vol. 59, pp. 932-938, 2012.
4 van Dort M. J., Woerlee P. H., and Walker A. J., "A Simple Model for Quantization Effects in Heavily-Doped Silicon MOSFETs at Inversion Conductions," Solid-State Electronics, Vol. 37, pp. 411-414, 1994   DOI
5 J. H. Lee, "A Study of Dynamic Properties of Graphene-Nanoribbon Memory," Journal of the Semiconductor & Display Technology, Vol. 13, pp. 53-56, 2014
6 Larcher L., Paccagnella, Scarpa A., and Ghidini G., "A new Model of Gate Capacitance as a Simple Tool to Extract MOS Parameters," IEEE Transactions on Electron Devices, Vol. 48, pp. 935-945, 2001.   DOI
7 Ando T., Fowler A. B., and Stern F., "Electronic Properties of Two-Dimensional Systems," Reviews of Modern Physics, Vol. 54, pp. 437-672, 1982   DOI
8 Karim M. A. and Haque A., "A Physically Based Accurate Model for Quantum Mechanical Correction to the Surface Potential of Nanoscale MOSFETs," IEEE Transactions on Electron Devices, Vol. 57, pp. 496-502, 2010.   DOI
9 Lee J. H. and Hong D. K, "Charge-Based Quantum Correction Noise Model in Nanoscale MOSFET," Journal of Semiconductor Technology and Science," Vol. 19, pp.50-62, 2019   DOI
10 Liu W., Jin X., and King Y., and Hu C., "An Efficient and Accurate Compact Model for Thin-Oxide-MOSFET Intrinsic Capacitance Considering the Finite Charge Layer Thickness," IEEE Transactions on Electron Devices, Vol. 46, pp. 1070-1072, 1999.   DOI
11 Ma Y., Li Z., Liu L., Tian L., and Yu Z., "Effective Density-of-States Approach to QM Correction in MOS Structure," Solid-State Electronics, Vol. 44, pp. 401-407, 2000   DOI
12 Ip B. K. and Brews J. R., "Quantum Effects upon Drain Current in a Biased MOSFET," IEEE Transactions on Electron Devices, Vol. 45, pp. 2213-2221, 1998.   DOI
13 Zhang X. and White M. H., "A Quantum Mechanical Treatment of Low Frequency Noise in High-K NMOS Transistors with Ultrathin Gate Dielectrics," Solid-State Electronics, Vol. 78, pp. 131-135, 2012   DOI
14 Celik-Butler Z. and Wang F., "Effects of Quantization on Random Telegraph Signals Observed in Deep-Submicron MOSFETs," Microelectronics Reliability, Vol. 40, pp.1823-1831, 2000   DOI
15 Lee J. H., "Noise model of Gate-Leakage Current in Ultrathin Oxide MOSFETs," IEEE Transactions on Electron Devices, Vol. 50, pp.2499-2506, 2003   DOI
16 Pacelli A., Villa S., Lacaita A. L., and Perron L. M., "Quantum Effects on the Extraction of MOS Oxide Traps by 1/f noise measurements," IEEE Transactions on Electron Devices, Vol. 46, pp. 1029-1035, 1999.   DOI
17 Chauhan Y. S., Karim M. A., Venugopalan S., Agarwal H., "BSIM6.0 MOSFET Compact Model," Technical Manual, 2013.
18 Lopez-Villanueva J. A., Cartujo-Casinello P., Banqueri J. Gamiz F., and Rodriguez S., "Effects of the Inversion Layer Centroid on MOSFET Behavior," IEEE Transactions on Electron Devices, Vol. 44, pp. 1915-1922, 1997.   DOI
19 Masson P., Ghibaudo G., Autran J. L., Morfouli P., and Brini J., "Influence of Quadratic Mobility Degradation Factor on Low Frequency Noise in MOS Transistors," Electronics Letters, Vol. 34, pp. 1977-1979, 1998   DOI
20 Ma Y., Liu L., Tian L., Yu Z., and Li Z., "Analytical Charge-Control and I-V Model for Sub-micrometer and Deep-submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects," IEEE Transactions on Computer-Aided Design, Vol. 20, pp. 495-502, 2001   DOI
21 Lee J. H., Bosman G., Green K. R., and Ladwig D., "Model and Analysis of Gate Leakage Current in Ultrathin Nitrided Oxide MOSFETs," IEEE Transactions on Electron Devices, Vol. 49, pp.1232-1241, 2002   DOI
22 Lee J. H. and Bosman G., "$1/f^{\gamma}$ Drain Current Noise Model in Ultrathin Oxide MOSFETs," Fluctuation and Noise Letters, Vol. 4, pp.L297-L307, 2004   DOI