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Noise Modeling of Gate Leakage Current in Nanoscale MOSFETs  

Lee, Jonghwan (Department of System Semiconductor Engineering, Sangmyung University)
Publication Information
Journal of the Semiconductor & Display Technology / v.19, no.3, 2020 , pp. 73-76 More about this Journal
Abstract
The physics-based compact gate leakage current noise models in nanoscale MOSFETs are developed in such a way that the models incorporate important physical effects and are suitable for circuit simulators, including QM (quantum-mechanical) effects. An emphasis on the trap-related parameters of noise models is laid to make the models adaptable to the variations in different process technologies and to make its parameters easily extractable from measured data. With the help of an accurate and generally applicable compact noise models, the compact noise models are successfully implemented into BSIM (Berkeley Short-channel IGFET Model) format. It is shown that the noise models have good agreement with measurements over the frequency, gate-source and drain-source bias ranges.
Keywords
Compact Noise Model; Quantum-Mechanical Effects; Gate Leakage Current Noise; BSIM;
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