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Effect of the Substrate Temperature on Monitoring of Atomic Layer Etching Rate via an In-situ Ellipsometer  

Lee, Young Seok (Department of Physics, Chungnam National University)
Lee, Jang Jae (Department of Physics, Chungnam National University)
Lee, Sang Ho (Department of Physics, Chungnam National University)
Seong, In Ho (Department of Physics, Chungnam National University)
Cho, Chul Hee (Department of Physics, Chungnam National University)
Kim, Si Jun (Nanotech)
You, Shin Jae (Department of Physics, Chungnam National University)
Publication Information
Journal of the Semiconductor & Display Technology / v.18, no.4, 2019 , pp. 96-99 More about this Journal
Abstract
Atomic layer etching (ALE) is one of the most promising techniques in the semiconductor industry. Since ALE has to be precisely controlled on the angstrom scale to achieve ideal results, an in-situ analysis of the processes is highly required. In this regard, we found during ALE experiments with in-situ monitoring with an ellipsometer that changes in the substrate temperature affected the refractive index of a material, leading to changes in measured film thickness. In addition, more ideal ALE results could be achieved by keeping the substrate temperature constant.
Keywords
Atomic Layer Etching; in-situ ellipsometry; film thickness; temperature; refractive index;
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