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Contamination Particle and Cracking Behavior of the Anodic Oxidation in Sulfuric Acid Containing Cerium Salt  

So, Jongho (Department of Advanced Materials Engineering, Daejeon University)
Yun, Ju-Young (Center for Materials and Energy Measurement, Korea Research Institute of Standards and Science)
Shin, Jae-Soo (Department of Advanced Materials Engineering, Daejeon University)
Publication Information
Journal of the Semiconductor & Display Technology / v.17, no.4, 2018 , pp. 11-15 More about this Journal
Abstract
The parts of equipment for semiconductor are protected by anodic aluminum oxide film to prevent corrosion. This study investigated contamination particle and cracking behavior of anodic oxidation in sulfuric acid containing cerium salt. The insulating properties of the sample were evaluated by measuring the breakdown voltage. It was confirmed that the breakdown voltage was about 50% higher when the cerium salt was added, and that the breakdown voltage after the heat treatment was 55% and 35% higher at $300^{\circ}C$ and $400^{\circ}C$, respectively. After heating at $300^{\circ}C$ and $400^{\circ}C$, cracks were observed in non cerium and cerium 3mM, and more cracks occur at $400^{\circ}C$ than at $30^{\circ}C$. The amount of contamination particles generated in the plasma is about 45% less than that of non-cerium specimens.
Keywords
Anodizing; Plasma; Contamination particle; Thermal Shock; Crack;
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