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Atomic Force Microscopy Simulation for Si (001) Surface Defects  

Jo, Junyeong (School of Energy Materials and Chemical Engineering, Korea University of Technology and Education)
Kim, Dae-Hee (School of Energy Materials and Chemical Engineering, Korea University of Technology and Education)
Kim, Yurie (Department of Creative IT Engineering, Pohang University of Science and Technology)
Kim, Ki-Yung (School of Energy Materials and Chemical Engineering, Korea University of Technology and Education)
Kim, Yeong-Cheol (School of Energy Materials and Chemical Engineering, Korea University of Technology and Education)
Publication Information
Journal of the Semiconductor & Display Technology / v.17, no.4, 2018 , pp. 1-5 More about this Journal
Abstract
Atomic force microscopy (AFM) simulation for Si (001) surface defects was conducted by using density functional theory (DFT). Three major defects on the Si (001) surface are difficult to analyze due to external noises that are always present in the images obtained by AFM. Noise-free surface defects obtained by simulation can help identify the real surface defects on AFM images. The surface defects were first optimized by using a DFT code. The AFM tip was designed by using five carbon atoms and positioned on the surface to calculate the system's energy. Forces between tip and surface were calculated from the energy data and converted into an AFM image. The simulated AFM images are noise-free and, therefore, can help evaluate the real surface defects present on the measured AFM images.
Keywords
Atomic Force Microscopy (AFM); Density Functional Theory (DFT); Silicon Surface Defects; Computer Simulation;
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