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1 |
Electrical Properties of BaTiO3 Thick Films Fabricated by Screen-printing Method
Ahn, Byeong-Lib;Lee, Sung-Gap;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.8, no.4, pp.149-152,
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2 |
Structural and Electrical Properties of Bismuth Magnesium Niobate Thin Films deposited at Various Temperatures
Park, Jong-Hyun;Yoon, Soon-Gil;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.8, no.4, pp.153-156,
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3 |
A Novel Sulphur Cathode Materials for Rechargeable Lithium Batteries
Jin, Bo;Park, Kyung-Hee;Gu, Hal-Bon;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.8, no.4, pp.157-160,
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4 |
The Deposition and Characteristics of Ni Thin Films according to Annealing Conditions for the Application of Thermal Flow Sensors
Noh, Sang-Soo;Lee, Eung-Ahn;Lee, Sung-Il;Jang, Wen-Teng;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.8, no.4, pp.161-165,
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5 |
Characteristics of Motion-blur Free TFT-LCD using Short Persistent CCFL in Blinking Backlight Driving
Han, Jeong-Min;Ok, Chul-Ho;Hwang, Jeoung-Yeon;Seo, Dae-Shik;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.8, no.4, pp.166-169,
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6 |
Electrical Properties of CuPc FET with Different Substrate Temperature
Lee, Ho-Shik;Park, Yong-Pil;Cheon, Min-Woo;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.8, no.4, pp.170-173,
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7 |
Electrical Properties of F16CuPC Single Layer FET and F16CuPc/CuPc Double Layer FET
Lee, Ho-Shik;Park, Yong-Pil;Cheon, Min-Woo;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.8, no.4, pp.174-177,
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8 |
The Study of High Brightness Prism Patterned LGP using Optical Simulation Analysis
Ok, Chul-Ho;Han, Jeong-Min;Hwang, Jeoung-Yeon;Seo, Dae-Shik;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.8, no.4, pp.178-181,
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9 |
Spatio-temporal Charge Distribution in Electric Double Layer Capacitors observed by pulsed Electro Acoustic Method
Sung, Youl-Moon;
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The Korean Institute of Electrical and Electronic Material Engineers
, v.8, no.4, pp.182-187,
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