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1 Electrical Properties of BaTiO3 Thick Films Fabricated by Screen-printing Method
Ahn, Byeong-Lib;Lee, Sung-Gap; / The Korean Institute of Electrical and Electronic Material Engineers , v.8, no.4, pp.149-152,
2 Structural and Electrical Properties of Bismuth Magnesium Niobate Thin Films deposited at Various Temperatures
Park, Jong-Hyun;Yoon, Soon-Gil; / The Korean Institute of Electrical and Electronic Material Engineers , v.8, no.4, pp.153-156,
3 A Novel Sulphur Cathode Materials for Rechargeable Lithium Batteries
Jin, Bo;Park, Kyung-Hee;Gu, Hal-Bon; / The Korean Institute of Electrical and Electronic Material Engineers , v.8, no.4, pp.157-160,
4 The Deposition and Characteristics of Ni Thin Films according to Annealing Conditions for the Application of Thermal Flow Sensors
Noh, Sang-Soo;Lee, Eung-Ahn;Lee, Sung-Il;Jang, Wen-Teng; / The Korean Institute of Electrical and Electronic Material Engineers , v.8, no.4, pp.161-165,
5 Characteristics of Motion-blur Free TFT-LCD using Short Persistent CCFL in Blinking Backlight Driving
Han, Jeong-Min;Ok, Chul-Ho;Hwang, Jeoung-Yeon;Seo, Dae-Shik; / The Korean Institute of Electrical and Electronic Material Engineers , v.8, no.4, pp.166-169,
6 Electrical Properties of CuPc FET with Different Substrate Temperature
Lee, Ho-Shik;Park, Yong-Pil;Cheon, Min-Woo; / The Korean Institute of Electrical and Electronic Material Engineers , v.8, no.4, pp.170-173,
7 Electrical Properties of F16CuPC Single Layer FET and F16CuPc/CuPc Double Layer FET
Lee, Ho-Shik;Park, Yong-Pil;Cheon, Min-Woo; / The Korean Institute of Electrical and Electronic Material Engineers , v.8, no.4, pp.174-177,
8 The Study of High Brightness Prism Patterned LGP using Optical Simulation Analysis
Ok, Chul-Ho;Han, Jeong-Min;Hwang, Jeoung-Yeon;Seo, Dae-Shik; / The Korean Institute of Electrical and Electronic Material Engineers , v.8, no.4, pp.178-181,
9 Spatio-temporal Charge Distribution in Electric Double Layer Capacitors observed by pulsed Electro Acoustic Method
Sung, Youl-Moon; / The Korean Institute of Electrical and Electronic Material Engineers , v.8, no.4, pp.182-187,