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Parameter Extraction Procedure for Ion Implantation Profiles to Establish Robust Database based on Tail Function
Suzuki, Kunihiro;Kojima, Shuichi;
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The Institute of Electronics and Information Engineers
, v.10, no.4, pp.251-259,
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Improvement of Thermal Stability of Ni-Silicide Using Vacuum Annealing on Boron Cluster Implanted Ultra Shallow Source/Drain for Nano-Scale CMOSFETs
Shin, Hong-Sik;Oh, Se-Kyung;Kang, Min-Ho;Lee, Ga-Won;Lee, Hi-Deok;
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The Institute of Electronics and Information Engineers
, v.10, no.4, pp.260-264,
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3 |
Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters
Cho, Seong-Jae;O'uchi, Shinichi;Endo, Kazuhiko;Kim, Sang-Wan;Son, Young-Hwan;Kang, In-Man;Masahara, Meishoku;Harris, James S.Jr;Park, Byung-Gook;
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The Institute of Electronics and Information Engineers
, v.10, no.4, pp.265-275,
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4 |
A 2.5 V 109 dB DR ΔΣ ADC for Audio Application
Noh, Gwang-Yol;Ahn, Gil-Cho;
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The Institute of Electronics and Information Engineers
, v.10, no.4, pp.276-281,
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A 67.5 dB SFDR Full-CMOS VDSL2 CPE Transmitter and Receiver with Multi-Band Low-Pass Filter
Park, Joon-Sung;Park, Hyung-Gu;Pu, Young-Gun;Lee, Kang-Yoon;
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The Institute of Electronics and Information Engineers
, v.10, no.4, pp.282-291,
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6 |
Timing Analysis Techniques Review for sub-30 nm Circuit Designs
Kim, Ju-Ho;Han, Sang-Woo;Jewell, Roy;
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The Institute of Electronics and Information Engineers
, v.10, no.4, pp.292-299,
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A Low-Power Portable ECG Touch Sensor with Two Dry Metal Contact Electrodes
Yan, Long;Yoo, Hoi-Jun;
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The Institute of Electronics and Information Engineers
, v.10, no.4, pp.300-308,
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A Gate-Leakage Insensitive 0.7-V 233-nW ECG Amplifier using Non-Feedback PMOS Pseudo-Resistors in 0.13-μm N-well CMOS
Um, Ji-Yong;Sim, Jae-Yoon;Park, Hong-June;
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The Institute of Electronics and Information Engineers
, v.10, no.4, pp.309-315,
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Design of an EEPROM for a MCU with the Wide Voltage Range
Kim, Du-Hwi;Jang, Ji-Hye;Jin, Liyan;Ha, Pan-Bong;Kim, Young-Hee;
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The Institute of Electronics and Information Engineers
, v.10, no.4, pp.316-324,
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