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| 1 |
Evaluation of a Self-Adaptive Voltage Control Scheme for Low-Power FPGAs
Ishihara, Shota;Xia, Zhengfan;Hariyama, Masanori;Kameyama, Michitaka;
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The Institute of Electronics and Information Engineers
, v.10, no.3, pp.165-175,
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| 2 |
Inductorless 8.9 mW 25 Gb/s 1:4 DEMUX and 4 mW 13 Gb/s 4:1 MUX in 90 nm CMOS
Sekiguchi, Takayuki;Amakawa, Shuhei;Ishihara, Noboru;Masu, Kazuya;
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The Institute of Electronics and Information Engineers
, v.10, no.3, pp.176- 184,
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| 3 |
VLSI Implementation of Auto-Correlation Architecture for Synchronization of MIMO-OFDM WLAN Systems
Cho, Jong-Min;Kim, Jin-Sang;Cho, Won-Kyung;
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The Institute of Electronics and Information Engineers
, v.10, no.3, pp.185-192,
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| 4 |
High-Speed Low-Complexity Reed-Solomon Decoder using Pipelined Berlekamp-Massey Algorithm and Its Folded Architecture
Park, Jeong-In;Lee, Ki-Hoon;Choi, Chang-Seok;Lee, Han-Ho;
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The Institute of Electronics and Information Engineers
, v.10, no.3, pp.193-202,
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| 5 |
An Analytical Model of the First Eigen Energy Level for MOSFETs Having Ultrathin Gate Oxides
Yadav, B. Pavan Kumar;Dutta, Aloke K.;
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The Institute of Electronics and Information Engineers
, v.10, no.3, pp.203-212,
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| 6 |
Optically Controlled Silicon MESFET Fabrication and Characterizations for Optical Modulator/Demodulator
Chattopadhyay, S.N.;Overton, C.B.;Vetter, S.;Azadeh, M.;Olson, B.H.;Naga, N. El;
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The Institute of Electronics and Information Engineers
, v.10, no.3, pp.213-224,
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| 7 |
Investigation of Thermal Noise Factor in Nanoscale MOSFETs
Jeon, Jong-Wook;Park, Byung-Gook;Shin, Hyung-Cheol;
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The Institute of Electronics and Information Engineers
, v.10, no.3, pp.225-231,
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| 8 |
A TX Clock Timing Technique for the CIJ Compensation of Coupled Microstrip Lines
Jung, Hae-Kang;Lee, Soo-Min;Sim, Jae-Yoon;Park, Hong-June;
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The Institute of Electronics and Information Engineers
, v.10, no.3, pp.232-239,
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| 9 |
Threshold Voltage Control through Layer Doping of Double Gate MOSFETs
Joseph, Saji;George, James T.;Mathew, Vincent;
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The Institute of Electronics and Information Engineers
, v.10, no.3, pp.240-250,
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