The diffusion of oxygen atoms on tungsten (110) surface is studied by comparison of experiment results and recent calculations. It has been suggested that the thermodynamic factor which is inversely proportional to be compressibility has strong temperature dependence which may cause non-Arrhenius behavior of diffusion coefficient. Recent experiments, however, indicate effectively no temperature dependence of this factor and support the view that non-Arrhenius behavior originates from the dynamic factor rather than the thermodynamic factor. Discrepancies in coverage dependence of physical quantities between theory and experiment are discussed.

In this study, PVDF thin films which show the excellent piezoelectricity and pyroelectricity, are prepared by PVD (physical vapor deposition) method, and thir electrical conduction phenomena for analyses of the electrical conduction mechanism and TSC (Thermally Stimulated Current) for identification of the behavior of conductive carriers are investigated. As a result of FT-IR(Fourier Transform Infrared Spectroscopy) spectra, the crystalline phase transforms $\alpha$ type into $\beta$ type with increasing electric field. From XRD (X-Ray diffraction) analyses patterns, the degree of crystallinity increases from 49.8% to 67%, as the substrate temperature increases from $30^{\circ}C$ to $80^{\circ}C$. As a result of electrical conduction phenomena, the electrical conduction mechanism of PVDF thin films is identified as ionic conduction mechanism. From TSC analyses, there are three peaks as P1, P2, P3 with increasing temperature, and with increasing substrate temperature, the peak temperature of TSC increases and the peak intensity of TSC decreases.

In this paper studied was the piezoelectric properties of the $\beta$-PVDF organic thin films prepared by physical vapour deposition method. The molecular orientation of organic thin films was controlled by the application of an electric field and variation of substrate temperature during the evaporation process. Optimum conditions of manufacturing $\beta$-PVDF organic thin film by physical vapor deposition method is to keep at the substrate temperature of $80^{\circ}C$, at the applied electric field of 142.8 kV/cm. The voltage output coefficient increased from 1.39 to 7.04V increasing the force moment.

Transparent and conduction tin oxide films have been deposited on glass substrates employing the low pressure chemical vapor deposition technique. Tetramethyltin, 1, 1, 1, 2-tetrafluoroethane, and pure oxygen or ozone-containing oxygen were used as the precursor, dopant and oxidant, respectively. In order to examine the role of ozone in the low pressure chemical vapor deposition of tin oxide films, deposition rate, and electrical and optical properties of tin oxide films deposited using ozone-containing oxygen were compared with those using pure oxygen. Tetramethyltin and 1, 1, 1, 2-tetrafluoroethane were chemically activated by thermally initiated decomposition of ozone. Using ozone-containing oxygen under otherwise identical deposition conditions, we succeeded in preparing tin oxide films f better quality at higher deposition rate.

Undoped InP epilayers with high purity were grown by using $In/PCl_3/H_2$ chloride vapor phase epitaxy. It was found that the growth of InP homoepitaxial layer is optimized at the growth temperature of $630^{\circ}C$ and at the $PCl_3$ molar fraction of $1.2\times10^{-2}$. The carrier concentration of InP epilayer was less than $10^{14} {cm}^{-3}$ from the low temperature (11K) photoluminescence measurement. Growth behavior of undoped InP current blocking layer on reactive ion-etched (RIE) mesas has been investigated for the realization of 1.55 $\mu \textrm m$buried-heterostructure laser diode (BH LD), using chloride vapor phase epitaxy. On the base of InP homoepitaxy, InP current blocking layers were grown at the growth temperatures ranging from $620^{\circ}C$ to $640^{\circ}C$. Almost planar grown surfaces without edge overgrowth were achieved as the growth temperature increased. It implied that higher temperature enhanced the surface diffusion of the growth species on the {111} B planes and suppressed edge overgrowth.

Fe/MnO multilayers with different bilayer thicknesses were grown by pulsed laser deposition method. Grazing incidence X-ray reflectivity results showed obvious multilayer Bragg peaks implying highly layered samples and, through their analysis, some structural parameters were quantiatively estimated. From the X-ray diffraction peak corresponding to MnO(111), Mn-oxide turned out to be dominantly MnO. To characterize the magnetic properties of $Mn^{+2}$, XMCD were carried out. Magnetic moments of MnO near interfaces were ordered in the opposite direction to those of Fe.

We investigated the interfacial reactions between the $Y_2O_3$ film deposited by ICB processing and p-type (100) Si substrates upon annealing treatments in $O_2$ and Ar gas ambients. we also investigated the evolution of surface morphology of ICB deposited $Y_2O_3$ films upon annealing treatments. We observed that the root-mean-square(RMS) value of surface roughness measured by AFM increased with annealing time at $800^{\circ}C$ in $O_2$ ambient, while the change of surface roughness was not observed in Ar ambient. We also found the growth of $SiO_2$ layer and the formation of yttium silicate layer. From the capacitance values $(C_{acc})$ measured by C-V measurements, the relative didldctric constant of $Y_2O_3$ film in metal-insulator-semiconductor(MIS) structure was estimated to be about 9.

$SrBi_{2x}Ta_2O_9$ (SBT) thin films were prepared on platinized silicon substrates by MOD process, and their ferroelectric and leakage current characteristics were investigated. The grain size of the MOD derived SBT films increased with increasing the BI/Ta mole ration. Although the SBT films with x of 0.8~1.2 were composed of the equiaxed grains, the elongated grains were also observed for the SBT films with x of 1.4 and 1.6. The SBT film with x of 1.2 exhibited the optimum ferroelectric properties of 2PR : 9.79 $\muC/\textrm{cm}^2$ and Ec : 24.2kV/cm at applied voltage of 5V. The leakage current density of the SBT films increased with increasing the BI/Ta mole ratio. With post annealing process, 2Pr and $E_c$of the SBT film with x of 1.2 increases 11.3 $\muC/\textrm{cm}^2$ and 39.6kV/cm, respectively. decrement of the leakage current density by post annealing process increased remarkably with increasing the Bi/ta mole ratio, and the SBT film with x=1.6 exhibited the lowest leakage current density after post annealing process.

$SrBi_{22.4}Ta_2O_9$ (SBT) thin films of 70~150 nm thickness were prepared on platinized silicon substrates by Liquid Source Misted Chemical Deposition (LSMCD) process, and their microstructure, feroelectric and leakage current characteristics were investigated. By annealing at $800^{\circ}C$ for 1 hour in oxygen ambient, SBT films were fully crystallized to the Bi layered perovskite structure without preferred orientation. The grain size of the LSMCD- derived SBT films was about 100nm, and was not varied with the film thickness. $2P_r$ and $E_c$ of the SBT films increased with decreasing the film thickness, and the 70nm-thick SBT film exhibited $2P_r$ of 17.8 $\mu$C/$\textrm{cm}^2$ and $E_c$ of 74kV/cm at applied voltage of 5V. Within the film thickness range of 70~150nm, the relative dielectric permittivity of the LSMCD-derived SBT film decreased with decreasing the film thickness. Leakage current densities lower than $10^{-7}\textrm{A/cm}^2$ at 5V were observed in the SBT films thicker than 125nm.

Pt/SBT/Pt capacitors were fabricated using the MOD-derived $SrBi_{2x}Ta_2O_9$ (SBT) films and their ferroelectic and leakage current characteristics were investigated with post annealing at 400~$800^{\circ}C$. Although the MOD-derived SBT film exhibited the hysteresis loop typical for the leaky film, the well-saturated ferroelectric hysteresis loop could be obtained by post annealing the Pt/SBT/Pt capacitors at $550^{\circ}C$~$800^{\circ}C$. The remanent polarization $2P_r$ of the SBT film exhibited a maximum value of 9.72$\mu\textrm{cm}^2$ with post annealing at $600^{\circ}C$, and then decreased with increasing the post annealing temperature above $600^{\circ}C$. The MOD-derived SBT films exhibited the high leakage current density of ~$10^{-3} \textrm{A/cm}^2$ at 75kV/cm. With post annealing the Pt/SBT/Pt capacitor at 600~$800^{\circ}C$, however, the leakage current density decreased remarkably to less than $10^{-6}\textrm{A/cm}^2$ at 75kV/cm.

Recently low resistance of gate line or data line is required for large screen size TFT-LCD panels. As a result, lower resistance Al-alloy is currently reviewed extensively and the resistivity is required smaller than 10$\mu\Omega$cm. In this paper, Al-Nd and Al-Zr thin film were deposited on glass substrated by D.C. magnetron sputtering system under various condition. Its properties were characterized by SEM, AFM, XRD and 4-point-probe. The optimal condition was $120^{\circ}C$, 125W, 0.4Pa, 30sccm (Ar) and $350^{\circ}C$, 20min. annealing. At that condition the resistivity of Al-Zr(0.9%wt.) is about 4$\mu\Omega$cm.

Deposition characteristics of Cu thin films using Ar carrier gas and $H_2$ processing gas at various working pressures and substrate temperatures were investigated. Also, effects of $H_2$ pretreatment using plasma at $200^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure were stdied. Cu thin films were deposited on TiN/Si substrate at working pressure of 0.5~1.5 Torr, substrate temperatures of 140~$240^{\circ}C$ with (hface)Cu(tmvs). Substrates were pretreated by $H_2$ plasma, and Cu films deposited in situ using twofold shower head. The purity, electrical resistivity, thickness, surface morphology, optical properties of the deposited Cu films were measured b the AES, four point probe, stylus profiler, SEM,. and the uv-visible spectrophotometer. This study suggests that $H_2$ plasma is an effective method for enhancing deposition rate and for producing high quality copper thin films.