Processing of thin films by chemical vapor deposition (CVD) is accompanied by chemical reactions, in which the rigorous kinetic analysis is difficult to achieve. In these conditions, thermodynamic calculation leads to better understanding of the CVD process and helps to optimise the experimental parameters to obtain a desired product. A CVD phase diagram has been used as guide lines for the process. By determining the effect of each process variable on the driving force for deposition, the thermodynamic limit for the substrate temperature that diamond can deposit is calculated in the C-H system by assuming that the limit is defined by the CVD diamond phase diagram. The addition of iso-supersaturation ratio lines to the CVD phase diagram in the Si-Cl-H system provides additional information about the effects of CVD process variables.

The rare-earth ions (R3+, R=Nd, Er) doped CaF2 layers have been grown on CaF2(111) substrate by molecular beam epitaxy. The epitaxial relationship and the crystallinity of CaF2:R3+ layers depending on the concentration of R3+ were studied by reflection high-energy electron diffraction (RHEED). In aspect of application as buffer layer in semiconductor-related hybrid structure, the lattice displacement between CaF2:R3+ layers and CaF2(111) substrate was investigated by X-ray rocking curve analysis.

Large vacuum Bridgman-Stockbarger (BS) equipments was composed for growing large diameter CaF2 crystals. The CaF2 crystal of 4.5-inch was grown under the conditions of freezing temperature gradient of 12$^{\circ}C$/cm and growing rate of 3mm/hr. Also the 6-inch crystal was grown by using thermal stabilization method under freezing temperature gradient of 14$^{\circ}C$/cm and growing rate of 2mm/hr. The dislocation density was characterized for evaluating the quality of crystals. And the optical properties such as transmittance, refractive index and fluorescence were analyzed in order to investigate on the applications of optical components.

An experimental investigation on flow pattern was carried out in molten Woods metal using an incorporated magnet probe to determine the velocity field in a Woods metal model of Czochralski crystal growth system. The local velocities in Woods metal were obtained 3-dimensionally at numerous positions of large crucible by measuring the voltage induced in the melt. Since there have not been a lot of the model experiments on the velocity distributions in the large size of melt with low Prandtl number for Czochralski crystal growth system, the present paper aims to give useful guidelines for e analysis of fluid flow in Czochralski growth system.

The growth method using multi-crucible set is very useful for mass production of optical crystals such as CaF2, Lif, BaF2 etc. CaF2 crystals of various diameter(42, 54 and 68mm) could be grown by means of multi-crucible set in one running operation and they were investigated to the formation of grain boundary as the cone-angle of crucibles. The qualities of crystal were evaluated by observing grain number and dislocation density. The transmittance was analyzed by using UV-Visible-NIR spectrometer.

Invisible charged clusters are suggested to form in the gas phase and to become the growth unit in the thin film process. Similar suggestion had been made by Glasner el al. in the crystal growth of KBr and KCL in the solution where the lead ions were added. The charged cluster model, which was suggested in the diamond CVD process by our group, will be extended to the other thin film processes. It will be shown based on both the theoretical analysis and the experimental evidences that the charged clusters are formed in the gas phase and become the growth unit of the crystal in the thin film process.

There have two kinds of defects, planar defects and vertical defects which were called micropipes in SiC bulk crystals grown by a sublimation method. We could decrease these defects by adding a little piece of Si in the SiC powder or using Ta cylinder in the crucible. so were report the dependence of these defects in a wafer on silicon/carbon ratio in this paper. The chemical species sublimed from SiC powder is affected by carbon from the graphite wall of the crucible. It is important to control the chemical species on the substrate.

The effect of dopant and stoichiometry on the optical properties of LiNbO3 were studies. We prepared three samples, which are undoped, MgO doped LiNbO3 and near-stoichiometric LiNbO3 dielectric constant and transmittance in UV/VIS/IR light range were measured. The results showed that the features for high [Li]/[Nb] were similar to those for low [Li]/[Nb] but with high [Mg].

The GaN thick films were deposited on sapphire substrates by the chloride vapor phase epitaxy (CVPE) technique suing the GaCl3-NH3-N2 chemistry. Thermodynamic simulations were carried out to predict the optimum process windows, and the results were compared with the experiments. A large difference in the growth temperature was observed between the calculation an the experiment, and it indicated that the growth of GaN by the CVPE technique is kinetically limited.

Four valence of Chromium ion doped Yttrium Aluminum Garnet crystals were grown by Floating Zone and Czochralski methods. Changes of valence for Chromium (3+) ion to Chromium (4+) were achieved by substitution of Yttrium ion in dodecahedral site to Calcium and by substitution of Aluminum in octahedral site to Magnesium. Growth conditions for high quality of crystals were investigated. Grown crystals were cut and polished and then observed various types of defects. Characterizations by means of measurement of density and lattice parameter as a function of solidification fraction were performed. Results of Q-switching test using grown crystals were also reported.

The growing conditions of barium nitrate Ba(NO3)2 single crystals by aqueous solution method have been studied. Supersaturation of Ba(NO3)2 was 0.7% at 32.0$^{\circ}C$ and about 3% 34.0$^{\circ}C$. The obtained single crystals have three kind of morphology; the tertrahedron, the cube and rarely dodecahedron face. The faces of obtained crystals have been identified by X-ray diffractometer.

Fine powders of $\alpha$-Fe2O3 were prepared by precipitation method using iron (III) nitrate in ethanol solvent and the thick film using this powder was made by the screen printing technology. Effects of the reaction temperature and concentration of the iron (III) nitrate on the particle size and specific surface area were studied. Also, the relationship between the powder size and properties of the thick film was discussed.

Transition metal ions, such as Sc, V, Cr and Fe, doped rutile crystals were grown by Floating Zone method. Growth conditions for high quality of crystals depending on the concentration of doped ions were investigated. Grown crystals were cut and polished to thin wafers, and then various types of defects such as homogeneities, low angle grain boundaries, scattering centers, and oxygen vacancies were analyzed. The effects of transition metal ions on defect formation are discussed. Results and discussions on absorption and fluorescence spectra and electrical properties of grown crystals were also reported.

Langasite(La3Ga5SiO14) is a new piezoelectric material which is similar to quartz, LN(LiNbO3) and LT(LiTaO3) in its acoustic behavior. In this study, pure Langasite and Langasite family groups were synthesized by the solid state reactions in air. For the synthesis process, diffusion species were investigated and sintered body of synthesized powders were studied on dielectric property according to surface microstructures.

Plasma display panel is a potential candidate for HDTV, due to the fact hat the expansion of screen size is much easier using thick film technology. In this study, transparent dielectric materials using lead borosilicate glasses is developed, which satisfy the requirements of dielectrics for PDP. Paste is made of this glass composition. The paste has thixotropic behavior suitable for screen printing. The paste shows more thixotropic behavior as the particle size decrease. After firing, cross sectional area was analyzed by SEM. The void of fired thick film was removed using bimodal particle system. The dielectric showed good adhesion characteristics.

Reactive ion etching (RIE) of Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the could be used effectively to etch the Ta-Al alloy thin film. The etching rate of the thin film at a Ta content of 50 mol% was about 67$\AA$/min. No selectivity between the Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the etching rate of the SiO2 layer was 12 times faster than that of the Ta-Al alloy thin film. In addition, it was observed that photoresist of AZ5214 was more useful than Shiepley 1400-2 in RIE with the CF4 gas.

Selectivity of SiC deposition on a Si substrate partially covered with a masking material was investigated by introducing HCl gas into hexamethyldisilane/H2 gas system during the deposition. the schedule of the precursor and HCl gas flows was modified so that the selectivity of SiC deposition between a Si substrate and a mask material should be improved. It was confirmed that the selectivity of SiC deposition was improved by introducing HCl gas. Also, the pulse gas flow technique was effective to enhance the selectivity.

Transition metal Cr3+ and Fe3+ ion was diffused in white sapphire {0001}, {1010} crystal plane which were grown by the Verneuil method. It enhanced and changed the physical, electrical and optical properties of sapphires. After mixing the metallic oxide and metal powder, it were used for diffusion. Metallic oxide was synthesized by precipitation method and it's composition was mainly alumina which doped with chromium or ferric oxide. In case using metallic oxide, the dopping was slowly progressed and it needed the longer duration time and higher temperature, relatively. Metallic powder was vapoured under 1x10-4 torr of vacuum pressure at 1900(iron metal) and 2050(chromium)℃, first step. Diffusion condition were kept by 6atm of N2 accelerating pressure at 2050∼2150℃. Each surface density of sapphire crystal are 0.225(c) and 0.1199atom/Å2(a). The color of the Cr-doped sapphires was changed to red. Dopping reaction was come out more deep in th plane of {1010} than {0001}. It was speculated that the planar density was one of the factors to determine diffusion effect.

Au fine particle dispersed TiO2 film was prepared on silica glass substrate by sol-gel dip and firing process. The films were fabricated from the system of titanium tetraisoproxie-EtOh-HCl_H2O-hydrogen tetrachloroaurate(III) tetrahydrate. The conditions for the formation of the clear solution and dissolving high concentration of Au compound were examined. And a photoreduction process was adopted to control the size of gold metal particles. Phase evolution of matrix TiO2 and variation of Au particle with UV irradiation were investigated by XRDA, SEM, TEM and UV-visible spectrophotometer. And the effect of CPCl(Cetylpyridinium chloride monohydrate) as a dispersion agent was evaluated.

A numerical study was performed on the fluid flow in the melt of the cold model for Czochralski growth system. The fluid flow in the melt of Woods metal with crucible diameter of 20cm was calculated using a three dimensional finite difference method. Since the crucible size is large, fully turbulent model as well as laminar model was used in the calculation. The effects of crucible rotation rate, crystal rotation rate and wall temperature difference on the velocity and temperature distribution were also investigated. For the purpose of verifying the results of calculation, a cold model experiment using Woods metal was also conducted and the velocity distribution in the melt of the model was measured.

The Rapid Expansion of supercritical fluid Solutions (RESS) process was applied to particles coating. Experiments were conducted in a fluidized bed with an internal nozzle in the center of the reaction tube. Microcapsules (mean particle size : 49$\mu\textrm{m}$) prepared by spray drying method were used as the core particles. Supercritical CO2 solutions of paraffin were expanded through the nozzle in to the bed that was fluidized by air. Surface morphology prepared particles was observed by SEM. For the inspection of particle size change, particle size distributions were measured before and after coating. The releasing behavior of Mg2+ ions inspected by AA.