ETRI Journal

  • 제46권2호
  • /
  • Pages.323-332
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  • 2024
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  • 1225-6463(pISSN)
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  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
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Four-channel GaAs multifunction chips with bottom RF interface for Ka-band SATCOM antennas

  • Jin-Cheol Jeong (Satellite Payload Research Section, Electronics and Telecommunications Research Institute) ;
  • Junhan Lim (Satellite Payload Research Section, Electronics and Telecommunications Research Institute) ;
  • Dong-Pil Chang (Satellite Payload Research Section, Electronics and Telecommunications Research Institute)
  • 투고 : 2022.10.06
  • 심사 : 2023.02.20
  • 발행 : 2024.04.20
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초록

Receiver and transmitter monolithic microwave integrated circuit (MMIC) multifunction chips (MFCs) for active phased-array antennas for Ka-band satellite communication (SATCOM) terminals have been designed and fabricated using a 0.15-㎛ GaAs pseudomorphic high-electron mobility transistor (pHEMT) process. The MFCs consist of four-channel radio frequency (RF) paths and a 4:1 combiner. Each channel provides several functions such as signal amplification, 6-bit phase shifting, and 5-bit attenuation with a 44-bit serial-to-parallel converter (SPC). RF pads are implemented on the bottom side of the chip to remove the parasitic inductance induced by wire bonding. The area of the fabricated chips is 5.2 mm × 4.2 mm. The receiver chip exhibits a gain of 18 dB and a noise figure of 2.0 dB over a frequency range from 17 GHz to 21 GHz with a low direct current (DC) power of 0.36 W. The transmitter chip provides a gain of 20 dB and a 1-dB gain compression point (P1dB) of 18.4 dBm over a frequency range from 28 GHz to 31 GHz with a low DC power of 0.85 W. The P1dB can be increased to 20.6 dBm at a higher bias of +4.5 V.

키워드

과제정보

This work was supported by a grant from the Institute for Information & Communications Technology Planning & Evaluation (IITP), funded by the Korean government (MSIP) (no. 2018-0-00190, Development of Core Technology for Satellite Payload).

참고문헌

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