한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)

  • 제34권4호
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  • Pages.139-142
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  • 2024
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  • 1225-1429(pISSN)
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  • 2234-5078(eISSN)
한국결정성장학회 (The Korea Association of Crystal Growth)
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Hydride vapor phase epitaxy에 의한 후막 AlN 단결정의 성장 거동에 관한 연구

A study on the growth behavior of AlN single crystal growth by hydride vapor phase epitaxy

  • 강승민 (한서대학교 디자인공학융합학과)
  • Seung-min Kang (Dept. of Design and Engineering Convergence, Hanseo University)
  • 투고 : 2024.06.10
  • 심사 : 2024.08.19
  • 발행 : 2024.08.31
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초록

SiC와 GaN 등의 광에너지갭 소재들의 전력반도체에 대한 활용과 소자의 개발 추세와 함께 더 높은 에너지갭을 갖는 AlN 단결정에 대한 연구도 2인치 단결정 웨이퍼의 개발 성공 등 많은 연구 결과가 보고되고 있다. 그러나, 화학기상증착공법을 적용하여 성장된 AlN 단결정은 수 마이크로미터의 두께 이하의 박막은 개발되었으나, 그 이상의 두께를 갖은 결과는 거의 없다. 따라서, 본 연구에서는 화학기상증착공법중 하나인 HVPE(Hydride vapor phase epitaxy) 법을 적용하여 성장하고자 하였다. 성장된 AlN 단결정은 자체 제작된 설비를 이용하여 제작하였으며, 사파이어 기판을 사용하여, AlN 단 결정을 제조하기 위한 조건을 확립하고자 하였고, 그 결과를 광학현미경 관찰을 통하여 성장거동을 고찰하고자 하였다.

Along with the use of wide bandgap energy materials such as SiC and GaN in power semiconductors and the development trend of devices, many research results have been reported, including the success of research on AlN single crystals with higher energy gaps and the development of 2-inch single crystal wafers. However, AlN single crystals grown using chemical vapor deposition have been developed into thin films less than a few micrometers thick, but there are almost no results with thicknesses greater than that. Therefore, in this study, we attempted to grow by applying HVPE (Hydride vapor phase epitaxy), one of the chemical vapor deposition methods. The grown AlN single crystal was manufactured using self-designed equipment, and we attempted to establish the conditions for manufacturing AlN single crystals on sapphire wafer. We would like to characterize the growth behavior through an optical microscope observation.

키워드

과제정보

본 연구는 산업통상자원부에서 실시하는 우수기업연구소육성사업(ATC+)으로 진행되었으며 이에 감사드립니다(과제번호: 20018017).

참고문헌

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