참고문헌
- T. Ohiwa, A. Kojima, M. Sekine, I. Sakai, S. Yonemoto, Y. Watanabe, Mechanism of etch stop in high aspect-ratio contact hole etching, Japanese Journal of Applied Physics, 37 (1998) 5060-5063. https://doi.org/10.1143/JJAP.37.5060
- J.W. Coburn, H.F. Winters, Plasma etching-a discussion of mechanisms, Journal of Vacuum Science & Technology, 16 (1979) 391-403. https://doi.org/10.1116/1.569958
- A. Sankaran, M.J. Kushner, Etching of porous and solid SiO2 in Ar/c-C4F8, O2/c-C4F8 and Ar/O2/c-C4F8 plasmas, Journal of Applied Physics, 97 (2005) 023307.
- Y.H. Kim, J.S. Kim, D.C. Kim, Y.W. Kim, J.B. Park, D.S. Han, M.Y. Song, Ion and radical characteristics (mass/energy distribution) of a capacitively coupled plasma source using plasma process gases (CxFy), Coatings, 11 (2021) 993.
- N. Hiwasa, J. Kataoka, N. Sasao, S. Kuboi, D. Iino, K. Kurihara, H. Fukumizu, Analysis of formation mechanism of deposited film in a high-aspect-ratio hole during dry etching using fluorocarbon gas plasmas, Applied Physics Express, 15 (2022) 106002.
- S.N. Hsiao, K. Ishikawa, T. Hayashi, J. Ni, T. Tsutsumi, M. Sekine, M. Hori, Selective etching of SiN against SiO2 and poly-Si films in hydrofluoroethane chemistry with a mixture of CH2FCHF2, O2, and Ar, Applied Surface Science, 541 (2021) 148439.
- C. Li, R. Gupta, V. Pallem, G.S. Oehrlein, Impact of hydrofluorocarbon molecular structure parameters on plasma etching of ultra-low-K dielectric, Journal of Vacuum Science & Technology A, 34 (2016) 031306.
- D.S. Kim, E.A. Hudson, D. Cooperberg, E. Edelberg, M. Srinivasan, Profile simulation of high aspect ratio contact etch, Thin Solid Films, 515 (2007) 4874-4878. https://doi.org/10.1016/j.tsf.2006.10.023
- J.K. Lee, I.Y. Jang, S.H. Lee, C.K. Kim, S.H. Moon, Mechanism of sidewall necking and bowing in the plasma etching of high aspect-ratio contact holes, Journal of the Electrochemical Society, 157 (2010) D142-D146. https://doi.org/10.1149/1.3276511
- M. Wang, M.J. Kushner, High energy electron fluxes in dc-augmented capacitively coupled plasmas. II. Effects on twisting in high aspect ratio etching of dielectrics, Journal of Applied Physics, 107 (2010) 023309.
- E.A. Edelberg, A. Perry, N. Benjamin, E.S. Aydil, Compact floating ion energy analyzer for measuring energy distributions of ions bombarding radiofrequency biased electrode surfaces, Review of Scientific Instruments, 70 (1999) 2689-2698. https://doi.org/10.1063/1.1149829
- S. Huang, C. Huard, S.B. Shim, S.K. Nam, I.C. Song, S. Lu, M.J. Kushner, Plasma etching of high aspect ratio features in SiO2 using Ar/C4F8/O2 mixtures: A computational investigation, Journal of Vacuum Science & Technology A, 37 (2019) 031304.
- S. Huang, S.B. Shim, S.K. Nam, M.J. Kushner, Pattern dependent profile distortion during plasma etching of high aspect ratio features in SiO2, Journal of Vacuum Science & Technology A, 38 (2020) 023001.
- N. Negishi, M. Miyake, M. Izawa, K. Yokogawa, M. Oyama, T. Kanekiyo, Bottom profile degradation mechanism in high aspect ratio feature etching based on pattern transfer observation, Journal of Vacuum Science & Technology B, 35 (2017) 051205.
- J.W. Coburn, E. Kay, Positive-ion bombardment of substrates in rf diode glow discharge sputtering, Journal of Applied Physics, 43 (1972) 4965-4971. https://doi.org/10.1063/1.1661054
- A.V. Vasenkov, M.J. Kushner, Modeling of magnetically enhanced capacitively coupled plasma sources: Ar/C4F8/O2 discharges, Journal of Applied Physics, 95 (2004) 834-845. https://doi.org/10.1063/1.1633661
- E. Kawamura, V. Vahedi, M.A. Lieberman, C.K. Birdsall, Ion energy distributions in rf sheaths; review, analysis and simulation, Plasma Sources Science and Technology, 8 (1999) R45-R64. https://doi.org/10.1088/0963-0252/8/3/202
- D. Gahan, B. Dolinaj, M.B. Hopkins, Retarding field analyzer for ion energy distribution measurements at a radiofrequency biased electrode, Review of Scientific Instruments, 79 (2008) 033502.
- U.G. Meyer, J.W. Coburn, E. Kay, Ion-enhanced gas-surface chemistry: The influence of the mass of the incident ion, Surface Science, 103 (1981) 177-188. https://doi.org/10.1016/0039-6028(81)90106-0
- T. Basu, D.P. Datta, T. Som, Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering, Nanoscale Research Letters, 8 (2013) 289.
- H.C. Kwon, I.H. Won, S.H. Han, D.H. Yu, D.C. Kwon, Y.H. Im, S.Y. Cha, Effect of heavy inert ion strikes on cell density-dependent profile variation and distortion during the etching process for high-aspect ratio features, Physics of Plasmas, 29 (2022) 093510.
- M. Miyake, N. Negishi, M. Izawa, K. Yokogawa, M. Oyama, T. Kanekiyo, Effects of mask and necking deformation on bowing and twisting in high-aspect-ratio contact hole etching, Japanese Journal of Applied Physics, 48 (2009) 08HE01.
- M. Omura, J. Hashimoto, T. Adachi, Y. Kondo, M. Ishikawa, J. Abe, M. Sekine, Formation mechanism of sidewall striation in high-aspect-ratio hole etching, Japanese Journal of Applied Physics, 58 (2019) SEEB02.
- J.K. Kim, S.I. Cho, N.G. Kim, M.S. Jhon, K.S. Min, C.K. Kim, G.Y. Yeom, Study on the etching characteristics of amorphous carbon layer in oxygen plasma with carbonyl sulfide, Journal of Vacuum Science & Technology A, 31 (2013) 021301.
- J.K. Kim, S.H. Lee, S.I. Cho, G.Y. Yeom, Study on contact distortion during high aspect ratio contact SiO2 etching, Journal of Vacuum Science & Technology A, 33 (2015) 021303.
- M.Y. Yoon, H.J. Yeom, J.H. Kim, J.R. Jeong, H.C. Lee, Plasma etching of the trench pattern with high aspect ratio mask under ion tilting, Applied Surface Science, 595 (2022) 153462.
- Y. Miyawaki, Y. Kondo, M. Sekine, K. Ishikawa, T. Hayashi, K. Takeda, M. Hori, Highly selective etching of SiO2 over Si3N4 and Si in capacitively coupled plasma employing C5HF7 gas, Japanese Journal of Applied Physics, 52 (2013) 016201.
- J.H. Kim, J.S. Park, C.K. Kim, SiO2 etching in inductively coupled plasmas using heptafluoroisopropyl methyl ether and 1,1,2,2-tetrafluoroethyl 2,2,2-trifluoroethyl ether, Applied Surface Science, 508 (2020) 144787.
- Y.J. Kim, S.E. Kim, H.J. Kang, S.H. You, C.K. Kim, H.J. Chung, Characteristics of CF3 and C3F7O isomers for plasma etching of SiO2 and Si3N4 films, ACS Sustainable Chemistry & Engineering, 10 (2022) 10537-10546. https://doi.org/10.1021/acssuschemeng.2c01705
- H.W. Tak, H.J. Lee, L. Wen, B.J. Kang, D.I. Sung, J.W. Bae, G.Y. Yeom, Effect of hydrofluorocarbon structure of C3H2F6 isomers on high aspect ratio etching of silicon oxide, Applied Surface Science, 600 (2022) 154050.
- H.J. Lee, H.W. Tak, S.B. Kim, S.K. Kim, T.H. Park, J.Y. Kim, G.Y. Yeom, Characteristics of high aspect ratio SiO2 etching using C4H2F6 isomers, Applied Surface Science, 639 (2023) 158190.
- J. Ju, J. Park, J. Suh, H. Jeong, Advanced dry etch process with low global warming potential gases toward carbon neutrality, Journal of Korean Institute of Electrical and Electronic Material Engineers, 36 (2023) 99-108.
- S. Banna, A. Agarwal, G. Cunge, M. Darnon, E. Pargon, O. Joubert, Pulsed high-density plasmas for advanced dry etching processes, Journal of Vacuum Science & Technology A, 30 (2012) 040801.
- M.H. Jeon, A.K. Mishra, S.K. Kang, K.N. Kim, I.J. Kim, S.B. Lee, G.Y. Yeom, Characteristics of SiO2 etching by using pulse-time modulation in 60 MHz/2 MHz dual-frequency capacitive coupled plasma, Current Applied Physics, 13 (2013) 1830-1836. https://doi.org/10.1016/j.cap.2013.07.009
- M.H. Jeon, K.C. Yang, K.N. Kim, G.Y. Yeom, Effect of pulse phase lag in the dual synchronized pulsed capacitive coupled plasma on the etch characteristics of SiO2 by using a C4F8/Ar/O2 gas mixture, Vacuum, 121 (2015) 294-299. https://doi.org/10.1016/j.vacuum.2015.05.009
- C.H. Cho, K.H. You, S.J. Kim, Y.S. Lee, J.J. Lee, S.J. You, Characterization of SiO2 etching profiles in pulse-modulated capacitively coupled plasmas, Materials, 14 (2021) 5036.
- J.K. Lee, I.Y. Jang, S.H. Lee, C.K. Kim, S.H. Moon, Cyclic deposition/etching process to etch a bowing-free SiO2 contact hole, Journal of the Electrochemical Society, 156 (2009) D269-D274. https://doi.org/10.1149/1.3138134
- S. Kumakura, H. Sasagawa, T. Nishizuka, Y. Kihara, M. Honda, Novel technology of high-aspect-ratio etch utilizing coverage-controllable atomic layer deposition, Japanese Journal of Applied Physics, 61 (2022) SI1015.
- K.J. Kanarik, S.S. Tan, Y. Pan, J. Marks, Plasma Etching Chemistries of High Aspect Ratio Features in Dielectrics, United States Patent US, 20210005472A1, 7 January 2021.
- T. Ohiwa, K. Horioka, T. Arikado, I. Hasegawa, H. Okano, SiO2 tapered etching employing magnetron discharge of fluorocarbon gas, Japanese Journal of Applied Physics, 31 (1992) 405-410. https://doi.org/10.1143/JJAP.31.405
- T. Tillocher, R. Dussart, L.J. Overzet, X. Mellhaoui, P. Lefaucheux, M. Boufnichel, P. Ranson, Two cryogenic processes involving SF6, O2, and SiF4 for silicon deep etching, Journal of the Electrochemical Society, 155 (2008) D187-D191. https://doi.org/10.1149/1.2826280
- S.H. Hsiao, N. Britun, T.T.N. Nguyen, T. Tsutsumi, K. Ishikawa, M. Sekine, M. Hori, Manipulation of etch selectivity of silicon nitride over silicon dioxide to α-carbon by controlling substrate temperature with a CF4/H2 plasma, Vacuum, 210 (2023) 111863.
- S.H. Hsiao, M. Sekine, K. Ishikawa, Y. Iijima, Y. Ohya, M. Hori, An approach to reduce surface charging with cryogenic plasma etching using hydrogen-fluoride contained gases, Applied Physics Letters, 123 (2023) 212106.
- Y. Kiara, M. Tomura, W. Sakamoto, M. Honda, M. Kojima, Beyond 10㎛ depth ultra-high speed etch process with 84% lower carbon footprint for memory channel hole of 3D NAND flash over 400 layers, 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, 1-2.