A Study on Various Parameters of the PE-CVD Chamber with Wafer Guide Ring

웨이퍼 가이드링 적용에 따른 PE-CVD 챔버 변수에 대한 연구

  • Hyun-Chul Wang (School of Electrical, Electronics and Communication Engineering Korea University of Technology and Education) ;
  • Hwa-Il Seo (School of Electrical, Electronics and Communication Engineering Korea University of Technology and Education)
  • 왕현철 (한국기술교육대학교 전기전자통신공학과) ;
  • 서화일 (한국기술교육대학교 전기전자통신공학과)
  • Received : 2024.05.28
  • Accepted : 2024.06.21
  • Published : 2024.06.30

Abstract

Plasma Enhanced Chemical Vapor Deposition (PE-CVD) is a widely used technology in semiconductor manufacturing for thin film deposition. The implementation of wafer guide rings in PE-CVD processes is crucial for enhancing efficiency and product quality by ensuring uniform deposition around wafer edges and reducing particle generation. On the other hand, to prevent overall temperature non-uniformity and degradation of thin film quality within the chamber, it is essential to consider various parameters comprehensively. In this study, after applying the wafer guide rings, temperature variations and fluid flow changes were simulated. Additionally, by simulating the temperature and flow changes when applied to the PE-CVD chamber, this paper discusses the importance of optimizing variables within the entire chamber.

Keywords

Acknowledgement

이 논문은 2024년도 한국기술교육대학교 교수 교육연구진흥과제 지원에 의하여 연구되었음.

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