DOI QR코드

DOI QR Code

Enhancing Die and Wire Bonding Process Reliability: Microstructure Evolution and Shear Strength Analysis of Sn-Sb Backside Metal

다이 및 와이어 본딩 공정을 위한 Sn-Sb Backside Metal의 계면 구조 및 전단 강도 분석

  • Yeo Jin Choi (Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology) ;
  • Seung Mun Baek (Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology) ;
  • Yu Na Lee (Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology) ;
  • Sung Jin An (Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology)
  • 최여진 (금오공과대학교 신소재공학과) ;
  • 백승문 (금오공과대학교 신소재공학과) ;
  • 이유나 (금오공과대학교 신소재공학과) ;
  • 안성진 (금오공과대학교 신소재공학과)
  • Received : 2024.02.23
  • Accepted : 2024.02.26
  • Published : 2024.03.27

Abstract

In this study, we report the microstructural evolution and shear strength of an Sn-Sb alloy, used for die attach process as a solder layer of backside metal (BSM). The Sb content in the binary system was less than 1 at%. A chip with the Sn-Sb BSM was attached to a Ag plated Cu lead frame. The microstructure evolution was investigated after die bonding at 330 ℃, die bonding and isothermal heat treatment at 330 ℃ for 5 min and wire bonding at 260 ℃, respectively. At the interface between the chip and lead frame, Ni3Sn4 and Ag3Sn intermetallic compounds (IMCs) layers and pure Sn regions were confirmed after die bonding. When the isothermal heat treatment is conducted, pure Sn regions disappear at the interface because the Sn is consumed to form Ni3Sn4 and Ag3Sn IMCs. After the wire bonding process, the interface is composed of Ni3Sn4, Ag3Sn and (Ag,Cu)3Sn IMCs. The Sn-Sb BSM had a high maximum shear strength of 78.2 MPa, which is higher than the required specification of 6.2 MPa. In addition, it showed good wetting flow.

Keywords

Acknowledgement

This research was supported by the Academic Research Fund of Kumoh National Institute of Technology (2021).

References

  1. D.-H. Jung, M.-H. Roh, J.-H. Lee, K.-H Kim and J. P. Jang, J. Microelectron. Packag. Soc., 24, 17 (2017).
  2. R. Khazaka, L. Memdizabal, D. Hevry and R. Hanna, IEEE Trans. Power Electron., 30, 2456 (2015).
  3. N. P. Kim and R. F. Cooley, Thin Solid Films, 153, 447 (1987).
  4. G. Ghosh, Acta Mater., 49, 2609 (2001).
  5. T. Shimizu, H. Ishikawa, I. Ohnuma and K. Ishida, J. Electron. Mater., 28, 1172 (1999).
  6. J. W. Jang, P. G. Kim, K. N. Tu and M. Lee, J. Mater. Res., 14, 3895 (1999).
  7. J. Lalena, N. Dean and M. Weiser, J. Electron. Mater., 31, 1244 (2002).
  8. J.-M. Song, H.-Y. Chuang and Z.-M. Wu, J. Electron. Mater., 35, 1041 (2006).
  9. M. Rettenmayr, P. Lambracht, B. Kempf and C. Tschudin, J. Electron. Mater., 31, 278 (2002).
  10. S. Kim, K.-S. Kim, S.-S. Kim and K. Suganuma, J. Electron. Mater., 38, 266 (2009).
  11. J.-E. Lee, K.-S. Kim, K. Suganuma, J. Takenaka and K. Hagio, Mater. Trans., 46, 2413 (2005).
  12. S. W. Yoon, M. D. Glover and K. Shiozaki, IEEE Trans. Power Electron., 28, 2448
  13. J. Choi, G. S. Choi and S. J. An, Sci. Rep., 9, 555 (2019).
  14. K.-N. Tu and R. Rosenberg, Jpn. J. Appl. Phys., 2, 633 (1974).
  15. Z. Marinkovic and V. Simic, Thin Solid Films, 98, 95 (1982).
  16. W. Zhang, B. Zhao, C. Zou, Q. Zhai, Y. Gao and S. F. A. Acquah, J. Nanomater., 2013, 193725 (2013).