반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

주파수 도메인 반사파 측정법을 이용한 플라즈마 공정장비 상태변화 연구

Status Change Monitoring of Semiconductor Plasma Process Equipment

  • 이윤상 (명지대학교 반도체공학과) ;
  • 홍상진 (명지대학교 반도체공학과)
  • Yunsang Lee (Department of Semiconductor Engineering, Myongji University) ;
  • Sang Jeen Hong (Department of Semiconductor Engineering, Myongji University)
  • 투고 : 2024.02.02
  • 심사 : 2024.03.20
  • 발행 : 2024.03.31
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초록

In this paper, a state change study was conducted through Frequency Domain Reflectometry (FDR) technology for the process chamber of plasma equipment for semiconductor manufacturing. In the experiment, by direct connecting the network analyzer to the RF matcher input of the 300 mm plasma enhanced chemical vapor deposition (PECVD) chamber, S11 was measured in a situation where plasma was not applied, and the frequency domain reacting to the chamber state change was searched. Response factors to changes in the status, such as temperature, spacing of the heating chuck, internal pressure difference, and process gas supply state were confirmed. Through this, the frequency domain in which a change in the reflection value was detected through repeated experiments. The reliability of the measured micro-displacement was verified through reproducibility experiments.

키워드

참고문헌

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