Journal of Power Electronics

The Korean Institute of Power Electronics (전력전자학회)
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Complete loss distribution model of GaN HEMTs considering the influence of parasitic parameters

  • Shengwei Gao (School of Electrical Engineering, Tiangong University) ;
  • Jinrui Tian (School of Electrical Engineering, Tiangong University) ;
  • Xiaoyu Fu (School of Electrical Engineering, Tiangong University) ;
  • Yongxiao Li (School of Electrical Engineering, Tiangong University) ;
  • Bo Wang (School of Electrical Engineering, Tiangong University) ;
  • Lixia Zhao (School of Electrical Engineering, Tiangong University)
  • Received : 2023.05.08
  • Accepted : 2023.09.28
  • Published : 2024.01.20
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Abstract

When compared with Si-based devices, Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) possess the advantages of lower junction-to-case thermal resistance, smaller on-state resistance, faster switching velocity, and higher switching frequency. These advantages make them a promising power semiconductor device. However, with the enhancement of switching frequencies, the influence of parasitic parameters on switching ringing and the losses of GaN HEMTs are increasingly severe. Thus, it is necessary to predict the loss distribution by establishing an accurate loss model of the switching process. On the premise of considering parasitic inductance, nonlinear junction capacitance, and reverse transfer characteristics, this article proposes a precise switching loss model of GaN HEMTs to predict the loss distribution in the switching process. In addition, it verifies results based on the double pulse test (DPT) circuit, which validates the accuracy of the proposed model. Ultimately, based on the above-mentioned loss model, this article discussed the influence of parasitic capacitance and inductance on the output capacitance loss (Eqoss), the reverse conduction loss (ESD), the opening V-I overlap loss (Eopen), the closing V-I overlap loss (Eclose), and the total loss (Etotal). Then, this article produces an optimizing method to enhance the conversion efficiency of GaN HEMTs in accordance with laboratory findings.

Keywords

Acknowledgement

This work was supported in part by the National Natural Science Foundation of China (NSFC) under Grant (51807139) and the National Natural Science Foundation of China (NSFC) under Grant (11974343).

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